Results 181 to 190 of about 395,248 (248)

High‐Performance Monolayer 1T‐GeO2 Transistors with Low‐Resistance Metal Contacts

open access: yesAdvanced Electronic Materials, EarlyView.
First‐principles quantum transport simulations reveal that monolayer 1T‐GeO2 forms ideal Ohmic contacts with conventional metals due to suppressed Fermi‐level pinning. The devices exhibit high on‐state currents of 1151–3237 nA nm−1 and ultralow contact resistance of 35.33–54.03 Ω·µm, outperforming state‐of‐the‐art 2D and oxide semiconductors in ...
Shuai Lang   +6 more
wiley   +1 more source

Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin   +4 more
wiley   +1 more source

The exercise of religious freedom in educational institutions in the light of ecthr jurisprudence

open access: yesWroclaw Review of Law, Administration and Economics, 2012
Valutytė Regina, Gailiūtė Dovilė
doaj   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss   +21 more
wiley   +1 more source

Home - About - Disclaimer - Privacy