Results 171 to 180 of about 44,390 (264)

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

From Flexible to Conformable Pressure Sensors: Mechanisms, Materials, and Biomedical Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review highlights recent progress, challenges and future opportunities in pressure sensing for advanced biomedical applications. We summarize key transduction mechanisms and emerging material strategies, discuss representative wearable and implantable applications for continuous physiological monitoring and provide a focused perspective on barrier
Rishabh B. Mishra   +2 more
wiley   +1 more source

Machine Learning‐Assisted Design and Performance Prediction of a Compact Dual‐Band Polarization‐Insensitive THz Metamaterial Absorber for Skin‐Cancer‐Related Refractive‐Index Sensing

open access: yesAdvanced Electronic Materials, EarlyView.
A compact QASRR‐based THz metamaterial absorber enables polarization‐insensitive dual‐band absorption and skin‐cancer‐related refractive‐index sensing through measurable resonance shifts. Field, surface‐current, and circuit analyses clarify the dual‐resonance mechanism, while StackNet‐assisted prediction accurately estimates the simulated absorption ...
Md. Murad Kabir Nipun   +5 more
wiley   +1 more source

Orientation‐Engineered PtTe2 Schottky FETs: Quantum Transport Insights for Dopant‐Free Advanced Technology Nodes

open access: yesAdvanced Electronic Materials, EarlyView.
Monolayer PtTe2 enables dopant‐free Schottky FETs through its thickness‐dependent electronic transition. Quantum transport simulations show that crystallographic orientation strongly influences device performance, with Γ–M transport delivering higher drive current, lower leakage, and improved switching behavior.
Lida Ansari, Paul K. Hurley, Farzan Gity
wiley   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy