Results 211 to 220 of about 46,781 (290)

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek   +8 more
wiley   +1 more source

The effect of bullying victimization on internet addiction: mediated by cyberbullying perpetration and moderated by social support. [PDF]

open access: yesBMC Public Health
Xie Y   +16 more
europepmc   +1 more source

Tuning the Electronic Structure and Spin State of Fe─N─C Catalysts Using an Axial Oxygen Ligand and Fe Clusters for High‐Efficiency Rechargeable Zinc–Air Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A FeN4─O/Clu@NC‐0.1Ac catalyst containing atomically‐dispersed FeN4─O sites (medium‐spin Fe2+) and Fe clusters delivered a half‐wave potential of 0.89 V for ORR and an overpotential of 330 mV at 10 mA cm−2 for OER in 0.1 m KOH. When the catalyst was used in a rechargeable Zn–air battery, a power density of 284.5 mW cm−2 was achieved with excellent ...
Yongfang Zhou   +8 more
wiley   +1 more source

Single Solid‐State Ion Channels as Potentiometric Nanosensors

open access: yesAdvanced Functional Materials, EarlyView.
Single gold nanopores functionalized with mixed self‐assembled monolayers act as solid‐state ion channels for direct, selective potentiometric sensing of inorganic ions (Ag⁺). The design overcomes key miniaturization barriers of conventional ion‐selective electrodes by combining low resistivity with suppressed loss of active components, enabling robust
Gergely T. Solymosi   +4 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

Relationship Between Body Mass Index, Eating Disorders, Internet Addiction, and Social Media Addictions Among Adolescents in Bangladesh. [PDF]

open access: yesPublic Health Chall
Siddik MAB   +9 more
europepmc   +1 more source

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