Results 181 to 190 of about 3,546,741 (346)

Highly Customizable Scaffold‐Type 3D Microelectrode Array Platform for Design and Analysis of the 3D Neuronal Network In Vitro

open access: yesAdvanced Functional Materials, EarlyView.
An innovative fabrication platform for 3D microelectrode arrays (MEAs) is presented, utilizing a 3D printer and the capillary action of electrically conductive inks. This approach enables the simple and versatile fabrication of 3D MEAs with complex structures.
Dongjo Yoon, Yoonkey Nam
wiley   +1 more source

High‐Density Boron Nitride Nanotube Composites via Surfactant‐Stabilized Lyotropic Liquid Crystals for Enhanced Space Radiation Shielding

open access: yesAdvanced Functional Materials, EarlyView.
High‐density BNNT films, enabling mechanical robustness and high space radiation shielding effectiveness, are fabricated using surfactant‐stabilized BNNT liquid crystal. Simulations indicate that a 50 g cm−2 BNNT film can reduce radiation exposure by 56% compared to zero shielding, potentially doubling the duration of astronaut missions on the lunar ...
Young‐Kyeong Kim   +17 more
wiley   +1 more source

Minimum proper interval graphs

open access: bronze, 1995
Marisa Gutiérrez, L. Oubiña
openalex   +1 more source

Single‐Step Electrochemical Battery Recycling

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates the use of single‐step recovery, an electrochemical process combining electrodeposition and electro‐dissolution, to recover lithiated transition metal oxides (LTMOs). The batteries produced through this recycling method perform similarly to batteries made from pristine materials.
Jarom G. Sederholm   +6 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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