Results 191 to 200 of about 2,012,623 (293)

Inverse design framework for 4D printed structures using the finite element method. [PDF]

open access: yesSci Rep
Liu Z   +6 more
europepmc   +1 more source

Electrically Tunable On‐Chip Topological Photonics with Integrated Carbon Nanotubes

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates electrically tunable on‐chip topological THz devices by integrating 2D carbon nanotube (CNT) sheets with valley‐Hall photonic crystals, enabling broadband transmission modulation (71% modulation depth) and tunable narrowband filtering (0.54 GHz shift) through electrically induced thermal tuning. This advancement paves the way for
Jifan Yin   +7 more
wiley   +1 more source

Multiband Switchable Microwave Absorbing Metamaterials Based on Reconfigurable Kirigami–Origami

open access: yesAdvanced Functional Materials, EarlyView.
A reconfigurable metamaterial featuring tunable microwave‐absorbing and load‐bearing performance is proposed. Stretchable kirigami and bistable origami configurations are integrated as actuating components, and the synergistic deformation mechanisms are systematically analyzed.
Weimin Ding   +7 more
wiley   +1 more source

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

open access: yesAdvanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus   +5 more
wiley   +1 more source

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch   +10 more
wiley   +1 more source

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere   +5 more
wiley   +1 more source

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