Results 261 to 270 of about 160,647 (318)
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Nature, 2001
By freezing out the motion between particles in a high-energy storage ring, it should be possible to create threads of ions, offering research opportunities beyond the realm of standard accelerator physics. The usual heating due to intra-beam collisions should completely vanish, giving rise to a state of unprecedented brilliance.
Schätz, Tobias +2 more
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By freezing out the motion between particles in a high-energy storage ring, it should be possible to create threads of ions, offering research opportunities beyond the realm of standard accelerator physics. The usual heating due to intra-beam collisions should completely vanish, giving rise to a state of unprecedented brilliance.
Schätz, Tobias +2 more
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Ion beam mixing by focused ion beam
Journal of Applied Physics, 2007Si amorphous (41 nm)/Cr polycrystalline (46 nm) multilayer structure was irradiated by 30 keV Ga+ ions with fluences in the range of 25−820 ions∕nm2 using a focused ion beam. The effect of irradiation on the concentration distribution was studied by Auger electron spectroscopy depth profiling, cross-sectional transmission electron microscopy, and ...
Árpád Barna +7 more
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1995
The measurement of resist image size using a finely focused ion beam (FIB) is described. Comparisons of FIB and scanning electron microscope (SEM) measurements of resist features are presented. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension metrology.
A. Wagner +3 more
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The measurement of resist image size using a finely focused ion beam (FIB) is described. Comparisons of FIB and scanning electron microscope (SEM) measurements of resist features are presented. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension metrology.
A. Wagner +3 more
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Electron beam ion source and electron beam ion trap (invited)
Review of Scientific Instruments, 2010The electron beam ion source (EBIS) and its trap variant [electron beam ion trap (EBIT)] celebrated their 40th and 20th anniversary, respectively, at the EBIS/T Symposium 2007 in Heidelberg. These technologically challenging sources of highly charged ions have seen a broad development in many countries over the last decades.
Reinard, Becker, Oliver, Kester
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Ion beam, focused ion beam, and plasma discharge machining
CIRP Annals, 2009Non-conventional methods of machining are used for many engineering applications where the traditional processes fail to be cost-effective. Such processes include Ion Beam Machining (IBM), focused ion beam (FIB) machining and plasma discharge machining.
D.M. Allen +6 more
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Ion beam deposition and in-situ ion beam analysis
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992The direct deposition in thin films and the production of very shallow junctions by ultralow energy ion implantation involves the interaction of ions with only the outermost surface layers of a solid. Quantitative structural and composition analysis of the grown or implanted layers requires the use of techniques with extremely high depth resolution.
A.H. Al-Bayati +4 more
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Ion beam synthesis of cobalt disilicide using focused ion beam implantation
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998Cobalt disilicide layers were formed by cobalt focused ion beam implantation into silicon. It was found that the CoSi2 layer formation strongly depends on the pixel dwell time. In order to obtain continuous layers, short dwell times of a few μs are needed. Rutherford backscattering and channeling measurements were carried out to understand this effect.
Teichert, J., Bischoff, L., Hausmann, S.
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Ion recombination correction in carbon ion beams
Medical Physics, 2016Purpose:In this work, ion recombination is studied as a function of energy and depth in carbon ion beams.Methods:Measurements were performed in three different passively scattered carbon ion beams with energies of 62 MeV/n, 135 MeV/n, and 290 MeV/n using various types of plane‐parallel ionization chambers.
S, Rossomme +8 more
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Ion-beam-induced amorphization
Materials Science and Engineering, 1987Abstract Ion beams are capable of inducing the formation of metastable amorphous phases in metallic systems, depending on the coupling between irradiation conditions, namely temperature, implanted species, energy and fluence, and target characteristics such as constituents, stoichiometry and structure.
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Microelectronic Engineering, 1984
Abstract Various maskless patterning techniques using focused ion beams are reviewed. These are ion beam assisted etching of Si and GaAs, ion beam modification technique for patterning Cr films and ion beam assisted depositions of Al films. It is shown that use of ion beam induced chemical effects is important to extent applications of focused ion ...
Kenji Gamo, Susumu Namba
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Abstract Various maskless patterning techniques using focused ion beams are reviewed. These are ion beam assisted etching of Si and GaAs, ion beam modification technique for patterning Cr films and ion beam assisted depositions of Al films. It is shown that use of ion beam induced chemical effects is important to extent applications of focused ion ...
Kenji Gamo, Susumu Namba
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