Results 201 to 210 of about 25,612 (260)

Ion beam irradiation of polymers

AIP Conference Proceedings, 1996
Mylar and kapton films were irradiated with H+ (2.5 Mev) or C4+ (12.5 Mev) beams, at doses up to 1.99×1016 H+/cm2 and 2.48×1015 C4+/cm2. Analysis of scattered projectiles simultaneously to irradiation has allowed discerning and following several changes undergone by the films, such as loss of elements, density changes, compaction and movement of ...
Saúl Romero H., Ghiraldo Murillo O., Rafael Policroniades R., Marco Fernández B., Jorge Fernández A., Octavio Alvarez F.   +5 more
openaire   +1 more source

Ion-chain interaction in keV ion-beam-irradiated polystyrene

Applied Physics Letters, 1987
Molecular weight distribution has been measured in monodisperse polystyrene film (MW=9 000 amu) after ion bombardment, in the ion fluence range 1011–1013 ions/cm2. The chosen beams are 100 keV He, 200 keV Ne, and 400 keV Ar. The experimental data have been interpreted in terms of a simple statistical model for cross-links.
CALCAGNO, Lucia, FOTI G, LICCIARDELLO, Antonino, PUGLISI O.   +3 more
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Amorphization and recrystallization of 6H-SiC by ion-beam irradiation

Journal of Applied Physics, 1994
Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis.
Heera, V., Kögler, R., Skorupa, W., Stoemenos, J.   +3 more
openaire   +2 more sources

The effects of ion-beam irradiation of polymers

International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry, 1991
Abstract Polymethacrylonitrile (PMCN) and polystyrene (PSt) were irradiated in the absence of O 2 with heavy-particle radiation: 275 MeV 20 10 Ne 7+ ions, 6.5 MeV 40 18 Ar 2+ ions and 180 MeV 40 18 Ar 8+ ions. In the case of PMCN the 100 eV yield of main-chain scission was found to decrease with increasing LET (-d E /d x in MeV μm -1 ): G (S)
Wolfram Schnabel, Siegfried Klaumünzer
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Fluctuations in the defect creation by ion beam irradiation

1998
Variance behaviour and correlation structures in ion beam induced cascades have been studied by Monte Carlo method. It was found that the number of defects created in an infinite medium has an over-Poisson variance due to fluctuations in the electronic losses.
R. Chakarova, Imre Pázsit
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Ion-beam and electron-beam irradiation of synthetic britholite

Journal of Nuclear Materials, 2003
Abstract Britholite, ideally Ca4−xREE6+x(SiO4)6O2 (REE=rare earth elements), has the hexagonal structure of apatite, a candidate waste form for actinides. Two synthetic britholites: Ca3.05Ce2.38Fe0.25Gd5.37Si4.88O26 (N56) and Ca3.78La0.95Ce1.45Zr0.78Fe0.14Nd2.15Eu0.50Si6.02O26 (N88) (P63; Z=1) were irradiated with 1.0 MeV Kr2+ and 1.5 MeV Xe+ over ...
S. Utsunomiya, S. Yudintsev, L.M. Wang, R.C. Ewing   +3 more
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Nitridation of vanadium by ion beam irradiation

Surface and Coatings Technology, 1994
Abstract The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β -V 2 N, and δ -VN.
Masato Kiuchi, Akiyoshi Chayahara, Atsushi Kinomura, Wolfgang Ensinger   +3 more
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Crosslinking of polysilanes by ion beam irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
Poly(methyl phenyl silane), PMPSi, poly(biphenyl methyl silane), PBMSi, poly(c-hexyl methyl silane), PcHexMSi, and poly(methyl n-hexyl silane), PMnHexSi, were irradiated in the absence of air with 300 MeV 86Kr14+, 200 MeV 129Xe14+ and 120 MeV 20Ne5+ ions. PMPSi was also irradiated with 65 MeV 15N3+ and 95 MeV 40Ar5+ ions.
V Herden, S Klaumünzer, W Schnabel
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Optical applications of ion beam irradiation

Vacuum, 2000
Abstract Layers of various metals (M) buried in Si, SiO 2 or Al 2 O 3 were irradiated with various fluences of heavy MeV ions in order to obtain either silicides or nanometric particles that are expected to exhibit interesting optical properties. The mixing of noble metals, Fe and Er with these matrices proceeds either via isotropic diffusion in ...
J. C. PIVIN, D. DIMOVAMALINOVSKA, M. SENDOVAVASSILEVA, M. NIKOLAEVA, MARTUCCI, ALESSANDRO   +4 more
openaire   +3 more sources

Pulsed ion beam irradiation of silicon

Nuclear Instruments and Methods in Physics Research, 1982
Abstract The effects of intense pulsed H + , B + and Ba + beam irradiation of single crystal Si and of ion implantation damaged Si have been studied by spreading resistance measurement, backscattering and channeling, and TEM. This paper reports the measurements and their correlation.
W.K. Chu, S.R. Mader, E.F. Gorey, J.E.E. Baglin, R.T. Hodgson, J.M. Neri, D.A. Hammer   +6 more
openaire   +1 more source