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The characteristics of ion beam assisted etching of GaAs by pulsed focused ion beam irradiation
Microelectronic Engineering, 1993Abstract We investigated the characteristics of ion beam assisted etching of GaAs by continuous and pulsed Ga + beam irradiation in a Cl 2 ambient. A rate equation model was proposed to explain the measured etch yield. By pulsed beam irradiation, the etch yield increased up to 500 atoms/ion and this increase was explained by the accumulation of ...
T. Kosugi, H. Iwase, K. Gamo
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Infrared analysis of ion beam irradiated polymers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2009Abstract Irradiation with heavy ions can produce several modifications in the chain structure of polymers. These modifications can be related to scissioning and cross-linking of chemical bonds, which depend on the ion fluence and the density of energy deposited in the material. Stacked thin film Makrofol-KG® samples were irradiated with 350 MeV Au26+
A.O. Delgado +4 more
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Ion beam irradiated optical channel waveguides
SPIE Proceedings, 2014[object Object]
Bányász I +10 more
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ESR investigations on ion beam irradiated polycarbonate
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994Abstract Electron spin resonance (ESR) investigations with a polycarbonate solid state nuclear detector, irradiated with oxygen ions, are reported. The nature of the paramagnetic defects induced by irradiation is discussed. The temperature dependence of resonance line parameters is studied.
M.I. Chiparǎ +4 more
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Optical absorptivity of ion-beam irradiated silicon
Applied Physics A Solids and Surfaces, 1988Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval ...
K. L. Bhatia +2 more
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Modification of bamboo surface by irradiation of ion beams
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003Abstract When beams of hydrogen ions, He+ and Ar+ were irradiated onto bamboo surface, gas release of hydrogen, water, carbon monoxide and carbon dioxide were enhanced. Time evolution of the gas emission showed two peaks corresponding to release of adsorbed gas from the surface by sputtering, and thermal desorption caused by the beam heating.
M. Wada +3 more
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Low energy ion beam irradiation of silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996Abstract A focused ion beam system with a liquid metal ion source has been used to irradiate monocrystalline silicon with various ions (Ga, Si, Au, Au clusters) at energies from 60 keV down to 40 eV. The fluence was between 10 12 and 10 16 atoms/cm 2 .
P.W. Nebiker +4 more
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Smoothing of Diamond Films by Ion Beam Irradiation
1991Abstract In this paper, smoothing of CVD diamond films by ion beam irradiation has been described. Diamond films are synthesized by arc discharge plasma jet CVD and microwave plasma CVD. As a result, by setting up an incident angle at 0°, 80°, smooth surfaces of microwave plasma CVD diamond films have been obtained.
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[Biocompatibility of ePTFE modified by ion beam irradiation].
No shinkei geka. Neurological surgery, 2004Expanded polytetrafluoroethylene (ePTFE) is a stable polymer and widely used as a prosthesis because of its chemical inertness. However, ePTFE as an artificial dura mater is often associated with postoperative leakage of the cerebrospinal fluid (CSF) due to its very low adhesiveness to fibrin glue and surrounding tissue.
Noriyoshi, Takahashi +4 more
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