Results 221 to 230 of about 1,025,431 (370)
Universal Superconductivity in FeTe and All‐Iron‐Based Ferromagnetic Superconductor Heterostructures
The first all‐iron‐based ferromagnetic superconductor heterostructures with high‐temperature superconductivity and strong ferromagnetism aredemonstrated. From this, it is discovered that FeTe becomes universallysuperconducting with a minute level of cationic impurities through doping ordiffusion from neighboring layers, suggesting its ground state can ...
Hee Taek Yi+12 more
wiley +1 more source
Inhibition of NMDA receptors and other ion channel types by membrane-associated drugs. [PDF]
Neureiter EG+3 more
europepmc +1 more source
Comments on ‘‘Propagation of intense ion beams in straight and tapered z-discharge plasma channels’’ [PDF]
F. Winterberg
openalex +1 more source
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel+6 more
wiley +1 more source
Deciphering Scorpion Toxin-Induced Pain: Molecular Mechanisms and Ion Channel Dynamics. [PDF]
He D, Lei Y, Qin H, Cao Z, Kwok HF.
europepmc +1 more source
A study of stretch‐activated channels in the membrane of frog oocytes: interactions with Ca2+ ions.
Vanni Taglietti, Mauro Toselli
openalex +2 more sources
The international symposium on receptors and ion channels—Including ion pumps and second messenger systems [PDF]
Ferdinand Hucho
openalex +1 more source
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger+10 more
wiley +1 more source
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo+16 more
wiley +1 more source