Results 221 to 230 of about 1,025,431 (370)

Universal Superconductivity in FeTe and All‐Iron‐Based Ferromagnetic Superconductor Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The first all‐iron‐based ferromagnetic superconductor heterostructures with high‐temperature superconductivity and strong ferromagnetism aredemonstrated. From this, it is discovered that FeTe becomes universallysuperconducting with a minute level of cationic impurities through doping ordiffusion from neighboring layers, suggesting its ground state can ...
Hee Taek Yi   +12 more
wiley   +1 more source

Inhibition of NMDA receptors and other ion channel types by membrane-associated drugs. [PDF]

open access: yesFront Pharmacol
Neureiter EG   +3 more
europepmc   +1 more source

Evidence of Long‐Range Dzyaloshinskii–Moriya Interaction at Ferrimagnetic Insulator/Nonmagnetic Metal Interfaces

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel   +6 more
wiley   +1 more source

Al₂O₃‐Functionalized Carbon Nanomembranes with Enhanced Water Permeance and Selectivity for Efficient Air Dehumidification

open access: yesAdvanced Functional Materials, EarlyView.
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger   +10 more
wiley   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

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