Results 101 to 110 of about 3,441,284 (367)

Ion-implantation induced anomalous surface amorphization in silicon [PDF]

, 1994
Spectroscopic ellipsometry (SE), high-depth-resolution Rutherford backscattering (RBS) and channeling have been used to examine the surface damage formed by room temperature N and B implantation into silicon.
Fried, M., Hanekamp, L.J., Khanh, N.Q., Kotai, E., Lohner, T., Nguyen, N.V., Silfhout, A. van, Toth, L., Vedam, K.   +8 more
core   +3 more sources

Smart, Bio‐Inspired Polymers and Bio‐Based Molecules Modified by Zwitterionic Motifs to Design Next‐Generation Materials for Medical Applications

Advanced Functional Materials, EarlyView.
Bio‐based and (semi‐)synthetic zwitterion‐modified novel materials and fully synthetic next‐generation alternatives show the importance of material design for different biomedical applications. The zwitterionic character affects the physiochemical behavior of the material and deepens the understanding of chemical interaction mechanisms within the ...
Theresa M. Lutz, Jonas De Breuck, Sahar Salehi, Meike N. Leiske   +3 more
wiley   +1 more source

Emerging 2D Materials and Their Hybrid Nanostructures for Label‐Free Optical Biosensing: Recent Progress and Outlook

Advanced Functional Materials, EarlyView.
This review highlights recent advances in label‐free optical biosensors based on 2D materials and rationally designed mixed‐dimensional nanohybrids, emphasizing their synergistic effects and novel functionalities. It also discusses multifunctional sensing platforms and the integration of machine learning for intelligent data analysis.
Xinyi Li, Yonghao Fu, Yuehe Lin, Dan Du
wiley   +1 more source

Insight into the nanoscale strengthening mechanism of polycrystalline iron implanted by Cr ions

Materials & Design
The strengthening mechanisms of ion implantation remain a challenge for the application on high-performance precision mechanical manufacturing. Based on the molecular dynamics (MD) method, the paper aims to explore the nanoscale mechanisms of the ...
Tingting Jiang, Jinyuan Tang, Jiuyue Zhao, Yihao Ling, Yelin Zeng   +4 more
doaj   +1 more source

Device Integration Technology for Practical Flexible Electronics Systems

Advanced Functional Materials, EarlyView.
Flexible device integration technologies are essential for realizing practical flexible electronic systems. In this review paper, wiring and bonding techniques critical for the industrial‐scale manufacturing of wearable devices are emphasized based on flexible electronics.
Masahito Takakuwa, Kento Yamagishi, Sunghoon Lee, Yusaku Tagawa, Takao Someya, Tomoyuki Yokota   +5 more
wiley   +1 more source

A Study on the Wettability of Ion-Implanted Stainless and Bearing Steels

Metals, 2019
To satisfy the harsh service demand of stainless steel and aviation bearing steel, the anticorrosion and wettability behaviors of 9Cr18 stainless steel and M50 bearing steel tailored by ion beam surface modification technology were experimentally ...
Xinchun Chen, Xuan Yin, Jie Jin
doaj   +1 more source

Charged particle sources for implantation and surface reactions Final report [PDF]

High temperature ion source developed for implantation and surface reactions of Ar, Pb, and Ga ...
Crawford, C. K., Ruedenauer, F. G.
core   +1 more source

Ice Lithography: Recent Progress Opens a New Frontier of Opportunities

Advanced Functional Materials, EarlyView.
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang, Gwendoline A. E. Anand, Rubaiyet Haque, Dylan A. Chiaro, Mona Sharma, Andrew R. Williams, Frank Niklaus, Daryl W. Yee, Gavin M. King, Anpan Han   +9 more
wiley   +1 more source

ION IMPLANTATION

PARIPEX INDIAN JOURNAL OF RESEARCH
Ion implantation is a low-temperature technique for the introduction of impurities (dopants) into semiconductors and offers more flexibility than diffusion. For instance, in MOS transistors, ion implantation can be used to accurately adjust the threshold voltage. A through study has been p[resented in the p[resent paper.]
openaire   +2 more sources

Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures

, 2010
We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in ...
A Dréau, Alleaume R, F Silva, J Achard, J Meijer, J-F Roch, L Rondin, P Spinicelli, Pezzagna S, S Bansropun, S Pezzagna, S Xavier, T Debuisschert, V Jacques, van der Sar T Hagemeier J Pfaff W Heeres E C Oosterkamp T H Bouwmeester D Hanson R   +14 more
core   +2 more sources