Results 111 to 120 of about 3,441,284 (367)

Fast-charging high-energy lithium-ion batteries via implantation of amorphous silicon nanolayer in edge-plane activated graphite anodes

Nature Communications, 2017
As fast-charging lithium-ion batteries turn into increasingly important components in forthcoming applications, various strategies have been devoted to the development of high-rate anodes.
Namhyung Kim, Sujong Chae, Jiyoung Ma, Minseong Ko, Jaephil Cho   +4 more
semanticscholar   +1 more source

A Smart Bio‐Battery Facilitates Diabetic Bone Defect Repair Via Inducing Macrophage Reprogramming and Synergistically Modulating Bone Remodeling Coupling

Advanced Functional Materials, EarlyView.
This research presents a novel implantable bio‐battery, GF‐OsG, tailored for diabetic bone repair. GF‐OsG generates microcurrents in high‐glucose conditions to enhance vascularization, shift macrophages to the M2 phenotype, and regulate immune responses.
Nanning Lv, Haifu Sun, Wenxiang Tang, Yonggang Li, Zhonglai Qian, Lihui Hong, Chong Chen, Hongye Li, Jiaxiang Bai, Yusen Qiao, Mingming Liu   +10 more
wiley   +1 more source

Multifunctional Microstructured Surfaces by Microcontact Printing of Reactive Microgels

Advanced Functional Materials, EarlyView.
Reactive poly(N‐vinylcaprolactam‐co‐glycidyl methacrylate) microgels are used as functional inks to create surface‐grafted arrays on glass via microcontact printing. The patterns (10–50 µm widths and spacings) enable stable binding and post‐functionalization with dyes and peptides.
Inga Litzen, Alexander Töpel, Martin Zenke, Antonio Sechi, Andrij Pich   +4 more
wiley   +1 more source

Critical temperature modification of low dimensional superconductors by spin doping

, 2007
Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe concentration. it was
Abrikosov, Anderson, Anderson, Ari Virtanen, Babić, Boato, Boato, Deiker, Friedel, Friedel, Grüner, Guenzburger, Guenzburger, Gustaaf Van Tendeloo, Jyrki Räisänen, Kaiser, Kiwi, Konstantin Arutyunov, MacLaughlin, Merriam, Moberly, Oleg Lebedev, Parvin, Pasi Jalkanen, Rivier, Roshen, Ruggiero, Steiner, Steiner, Steiner, Tinkham, Vladimir Tuboltsev, Young, Young, Ziegler, Zuckermann   +35 more
core   +1 more source

Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films [PDF]

, 2023
Salila Kumar Sethy, Kamatchi Jothiramalingam Sankaran, Prasanth Gupta, Joseph P. Thomas, Ajit Kumar Dash, J. Kennedy, K. T. Leung, Ken Haenen   +7 more
openalex   +1 more source

Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors

Advanced Functional Materials, EarlyView.
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee, Okin Song, Ji Yun Park, Yonghyun Albert Kwon, Jae Hyung Kim, In Soo Kim, Zdeněk Sofer, Jeong Ho Cho, Deep Jariwala, Hyesung Park, Joohoon Kang   +10 more
wiley   +1 more source

Grain refinement mechanism of nitrogen ion implantation in 7075-T651 aluminum alloy: Insights from the cellular automaton method

Journal of Materials Research and Technology
Ion implantation can strengthen metal surfaces by inducing grain refinement. However, the refinement mechanism remains unclear, which affects the precise application of the process.
Yelin Zeng, Tingting Jiang, Jinyuan Tang, Jiangping Zhu, Xiaocheng Shen, Yihao Ling   +5 more
doaj   +1 more source

Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

MATEC Web of Conferences, 2016
Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using
Atan N., Ahmad Ibrahim, Majlis B.Y., Azle M.F   +3 more
doaj   +1 more source

Ultrahigh‐Yield, Multifunctional, and High‐Performance Organic Memory for Seamless In‐Sensor Computing Operation

Advanced Functional Materials, EarlyView.
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim, Jaehyoung Ko, Namju Kim, Quynh H. Nguyen, Hoyeon Lee, Joohwan Eo, Seongeon Jin, Ji Eon Kwon, Seung‐Yeol Jeon, Youngdo Jeong, Dongseok Kwon, Sung Gap Im, Sanghan Lee, Byung Chul Jang, Yongho Joo   +14 more
wiley   +1 more source

Photoluminescence from He, Ar, Fe, and Cr ion-implanted MgO [PDF]

, 1973
Jason R. Crawford, R. D. Dragsdorf
openalex   +1 more source