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Rapid isothermal batch processing

10th IEEE International Conference of Advanced Thermal Processing of Semiconductors, 2003
Hot-wall batch thermal processing technology offers advantages of true emissivity-independent heating, excellent process uniformity and repeatability, and low cost of ownership (CoO). However, the comparatively long raw process time and queuing time associated with large-batch furnaces is contrary to the requirements of short cycle time manufacturing ...
A. Dip   +5 more
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Comparative study of isothermal and non-isothermal thermokevetic processes

Journal of Thermal Analysis, 1997
In this paper a graphical and analytical method is presented for generating reaction isotherms from a set of non-isotherms andvice versa. The method was tested by using computer generated curves. The method was also checked by studying the kinetics of dehydration of calcium oxalate in a static atmosphere.
C. Telea   +3 more
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Multi-wafer rapid isothermal processing

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203), 2002
A new concept in multi-wafer (MW) rapid thermal processing (RTP) is presented. An innovative approach to hot-wall, isothermal processing technology advances the conventional large batch environment into the realm of RTP processing. Using recent developments in heater technology along with advancements in other critical processing areas, a method for ...
K. Nakao   +8 more
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Rapid isothermal processing

Journal of Applied Physics, 1988
The physics and technology of a relatively new, short-time, thermal processing technique, namely rapid isothermal processing (RIP), based on incoherent sources of light for the fabrication of semiconductor devices and circuits, are reviewed in this paper.
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Expressing the equivalence of non‐isothermal and isothermal heat sterilization processes

Journal of the Science of Food and Agriculture, 2006
AbstractCurrently, the sterility of heat‐processed food and pharmaceuticals is assessed in terms of an F0 value, based on the equivalence of the heat treatment to an isothermal process at a reference temperature. This F0 value, however, has a meaning if, and only if, the inactivation kinetics of the targeted spores (or cells) follow a first‐order ...
Peleg, Micha   +2 more
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Kinetics of isothermal homogeneous-condensation processes

Journal of Soviet Laser Research, 1986
Isothermal condensation of supersaturated vapors of various substances and formation of lampblack particles by isothermal decomposition of hydrocarbon (acetylene) molecules is investigated by analytic methods. Expressions that differ generally from the classical ones are obtained, on the basis of the quasichemical model of cluster particles, for the ...
V. F. Gordiets   +2 more
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Rapid isothermal processing of strained GeSi layers

IEEE Transactions on Electron Devices, 1991
AbstractThe effects of high temperature-time thermal cycles on the structural stability of GexSi1−x/Si and Si/GexSi1−x/Si layers are studied, using double-crystal x-ray diffraction. The temperature-time cycles chosen in this study are useful for the fabrication of submicron Si MOSFETs.
D. K. Nayak   +4 more
openaire   +1 more source

Thermodynamics of Non-Isothermal Adsorption Processes

Journal of Non-Equilibrium Thermodynamics, 1988
On considere les processus d'adsorption entre une phase fluide monocomposante et la surface interne d'un ...
J. U. Keller, H.-W. Hardt
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Isothermal and adiabatic processes

2009
Abstract This chapter applies the results of the previous chapter to illustrate some properties concerning isothermal and adiabatic expansions of gases. These results will assume that the expansions are reversible, and so the first part of the chapter explores the key concept of reversibility. This will be important for the discussion of
Stephen J. Blundell   +1 more
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Rapid Isothermal Processing (RIP) Of Dielectrics

SPIE Proceedings, 1988
Rapid isothermal processing (RIP) based on incoherent sources of light has emerged as a major semiconductor processing technique. In this paper, a review of our own and other works on the RIP of dielectrics is presented.
R. Singh, F. Radpour
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