Results 171 to 180 of about 1,984,093 (365)
Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes
A 10 nm chiral magnetic memory device is fabricated using self‐assembled gold Nano Floret (Au‐NF) junction. Chiral molecules are adsorbed along with 10 nm super‐paramagnetic iron oxide nanoparticles (SPIONs), resulting in a 10 nm memory bit. Additionally, a new method for determining the molecular tilt angle of chiral monolayer assembly is presented by
Sheli Muzafe Reiss+5 more
wiley +1 more source
Magnetic Precursor to the Structural Phase Transition in V2O3
V₂O₃, a model Mott insulator, undergoes a metal‐insulator transition linked to structural and magnetic transitions, though the underlying mechanism remains unclear. Through muon‐spin rotation and X‐ray diffraction on strain‐engineered thin films, a magnetic precursor to the structural transition is identified, emphasizing the key role of magnetism in ...
Chubin Huang+7 more
wiley +1 more source
A Blending Approach for Dual Surface and Bulk Functionality in Organic Transistors
Dual‐mode organic transistor, combining Electrolyte‐Gated Organic Field‐Effect Transistor (EGOFET) and Organic Electrochemical Transistor (OECT) functionalities, is achieved by blending p‐type semiconducting polymer and n‐type mixed conducting fullerene.
Sasha Simotko+2 more
wiley +1 more source
IN THE MATTER OF AN APPLICATION FOR A PATENT BY JAMES EDWIN ROSS. IN THE MATTER OF AN APPLICATION FOR A PATENT BY STURMEY-ARCHER GEARS LD. AND ISRAEL COHEN [PDF]
openalex +1 more source
This study developed a neuroevolution machine learning potential of both a‐Si:H and a‐Si systems, and revealed that the softening of vibrational modes and enhanced anharmonicity contribute to the reduction in thermal conductivity with increasing temperature and hydrogen concentration.
Zhuo Chen+8 more
wiley +1 more source