Results 241 to 250 of about 1,545,496 (299)

Disrupted Top‐Down Modulation as a Mechanism of Impaired Multisensory Processing in Autistic Children

open access: yesAdvanced Science, EarlyView.
In this work, we show that multisensory integration in autistic children is characterized by attenuated ERP responses and α‐band desynchronization, together with reduced theta‐band communication between parieto‐occipital and frontal regions. The intermediate neural profile observed in unaffected siblings raises the possibility that altered cortical ...
Theo Vanneau   +3 more
wiley   +1 more source

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang   +5 more
wiley   +1 more source

Reliable Ru‐Based CBRAM Synapses for Energy‐Efficient Neuromorphic Computing: Suppressing Filament Overgrowth and Read Noise via Ru‐Pt Alloy and AlOx Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Ru–Pt alloying suppresses filament overgrowth and an AlOx switching layer enhances reliable switching, hopping transport enables conductance tuning via hopping distance modulation, Ru7Pt3/AlOx/Pt device yields 16 low‐noise conductance states, a 2–3‐fold improvement over prior Ru‐based CBRAM, and CSNN inference on FMNIST reaches 81% accuracy with 103 ...
Sangmin Lee   +10 more
wiley   +1 more source

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