Results 221 to 230 of about 126,479 (268)

A General and Efficient Framework for the Rapid Design of Miniaturized, Wideband, and High‐Bit RIS

open access: yesAdvanced Electronic Materials, EarlyView.
A general and efficient framework is proposed for the rapid design of high‐performance reconfigurable intelligent surfaces (RISs). This framework integrates advanced antenna design techniques and incorporates various load types, quantities, and values to achieve the design of high‐performance RISs.
Jun Wei Zhang   +14 more
wiley   +1 more source

Ethical and Frugal Approaches to Animal Experimentation in Bioelectronics and Neural Engineering—An Invertebrate Renaissance?

open access: yesAdvanced Electronic Materials, EarlyView.
Invertebrates are the classic neuroscience models and should make a comeback. Invertebrate organisms can be a more ethical and cost‐effective way to move bioelectronics research forward more rapidly. ABSTRACT The accelerating development of bioelectronic neural interfaces has brought increased attention to ethical considerations surrounding in vivo ...
Eric Daniel Głowacki
wiley   +1 more source

Effectiveness of suicide means restriction: an overview of systematic reviews. [PDF]

open access: yesBMJ Ment Health
Steeg S   +7 more
europepmc   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal   +2 more
wiley   +1 more source

Proximity Ferroelectricity in Compositionally Graded Structures

open access: yesAdvanced Electronic Materials, EarlyView.
We perform the finite element modeling of the polarization switching in the compositionally graded AlN‐Al1‐xScxN and ZnO‐Zn1‐xMgxO structures and reveal the switching of spontaneous polarization in the whole structure in all these systems. The coercive field to switch is significantly lower than the electric breakdown field of the unswitchable AlN and ...
Eugene A. Eliseev   +4 more
wiley   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee   +9 more
wiley   +1 more source

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