Results 301 to 310 of about 616,094 (331)

Investigations on junction temperature estimation based on junction voltage measurements

Microelectronics Reliability, 2010
Reliability and ageing tests on power semiconductor devices require estimation of junction temperatures in order to control thermal stresses and monitor failure criteria. For this purpose, thermo-electrical parameters, such as voltage forward drop dependence with temperature are usually carried out in low injection level.
Z. Khatir, L. Dupont, A. Ibrahim
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SiC Device Junction Temperature Online Monitoring

2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018
This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents.
Ruxi Wang, Juan Sabate, Krishna Mainali, Tomas Sadilek, Peter Losee, Yash Singh   +5 more
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Transient junction temperatures in power transistors

Electrical Engineering, 1960
Very little information is presently available on transistor junction temperatures for pulsed input waveforms. In the study described, a simple thermal model of a power transistor is assumed and a heat-flow analysis of the model, using Laplace transforms, is made.
W. W. Grannemann, J. D. Reese
openaire   +1 more source

Junction temperature analysis of IGBT devices

Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435), 2002
The junction temperature of IGBT is the key factors that could influence the whole system's reliability and efficiency. An electro-thermal method was implemented to estimate the junction temperature of IGBT devices in this paper. The junction temperature of power devices was found out based on the power losses of IGBT devices and the transient thermal ...
null Zhiguo Pan, null Xinjian Jiang, null Haiwei Lu, null Lipei Huang, S. Azuma, M. Kimata, M. Seto   +6 more
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Temperature rise of solid junctions

Electrical Engineering, 1958
SEMICONDUCTOR DEVICES always contain a junction; i.e., a plane zone of vanishing thickness. Current pulses through the device generate heat, mostly in the zone, from which it diffuses into the adjoining metallic body. Heat causes an increase of temperature in the junction, depending on the size of the current pulse and the rate of heat dissipation ...
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Junction Temperatures under Breakdown Condition

Japanese Journal of Applied Physics, 1969
A method of determining the junction temperature under breakdown condition is described. The junction temperature T 1 is calculated from the applied voltage and the current in the following equation: V 1=V B0·{1+β(T 1-T 0)}+I
openaire   +1 more source

Emitter-junction temperature measurement under nonuniform current and temperature distribution

IEEE Transactions on Electron Devices, 1976
A computer analysis of the temperature dependence of emitter junction voltage under an assumed nonuniform temperature distribution is presented, which demonstrates a temperature averaging effect when using junction voltage as an indicator of junction temperature.
V.C. Alwin, D.H. Navon
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Room-temperature resistance switching and temperature hysteresis of Pr0.7Ca0.3MnO3 junctions

Journal of Applied Physics, 2005
Current–voltage (I–V) characteristics of Ag∕Pr0.7Ca0.3MnO3(PCMO)∕YBa2Cu3O7−δ(YBCO) junctions fabricated on LaAlO3 (001) substrates were measured. Nonlinear, asymmetric, and hysteretic I–V curves, that are considered to be the nature of the resistance memory effect previously reported, were observed.
Joe Sakai, Syozo Imai
openaire   +1 more source

High Temperature Superconducting Junctions

1990
Some aspects of the Physics of high-temperature superconducting junctions are discussed. More recent results are outlined which may cast some light on the whole topic indicating, in spite of the severe material constraints, an encouraging trend.
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New Method of Monitoring Junction Temperature

IEEE Transactions on Instrumentation and Measurement, 1971
A variation of the pulse method of junction temperature measurement is presented. The new technique allows the junction temperature of diodes and transistors under stress test to be monitored by a simple procedure. An expression for correcting junction to case thermal resistances, obtained via the steady-state h rb method, for nonthermal effects is ...
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