Results 311 to 320 of about 616,094 (331)

High-temperature superconducting Josephson junction devices

SPIE Proceedings, 1991
The reasons for the failure to develop a successful Josephson tunnel junction made from high-temperature superconducting cuprates is discussed. The difficulties in developing a theoretical analysis of even simple-to-make cuprate Josephson devices are pointed out.
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Analysis of Junction Temperature of AlGaInP LED

Key Engineering Materials, 2018
Based on the material properties of AlGaInP LED, this paper proposes an approach for predicting the junction temperature. The junction temperature of AlGaInP LED predicted from this study agrees with the available experimental data. The junction temperature increases with increasing the injection current and substrate thickness of LED.
Song Feng Wan, Ching Yen Ho, Yong Gang Chen, Qing Bin Li, Fa Fen Yao   +4 more
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Temperature-gradient instabilities in semiconductor junctions

Physical Review B, 1975
A new type of instability is shown to occur if a temperature gradient is present across a $n{n}^{+}$, $p{p}^{+}$, or $pn$ junction with no voltage applied. The critical temperature gradient depends on the size and steepness of the junction and is smaller for large and less abrupt junctions.
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Junction-isolated CMOS for high-temperature microelectronics

IEEE Transactions on Electron Devices, 1989
Latchup susceptibility over a temperature range of 25-315 degrees C for variations on a 1.2- mu m CMOS process is studied. A special high-performance process, including all refractory metallization, thinner epi, and higher doping levels, resulted in metal-migration immunity and doubling of the latchup holding voltage and current at 300 degrees C. >
R.B. Brown, K. Wu, M. Ghezzo, D.M. Brown, E. Downey, D. Hanchar   +5 more
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MMC Power Device Loss and Junction Temperature Calculation Considering Junction Temperature Feedback

2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE), 2022
Rongliang Zheng, Youyuan Wang, Weirong Qian, Li Liu, Enke Yu   +4 more
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Temperature Dependence of Junction Transistor Parameters

Proceedings of the IRE, 1957
Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature ...
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Predicting IGBT junction temperature under transient condition

Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on, 2002
In this paper, a new method to predict the junction temperature of a solid-state switch under transient conditions is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified.
M.M.R. Ahmed, G.A. Putrus, L. Ran
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Temperature-dependent conductivity of ultrasmall Josephson junctions

Nanotechnology, 1999
In this paper we analyse the transport properties of Josephson junctions embedded in an electromagnetic environment caused by pads and leads near to the junctions. At sufficiently low temperatures we find that the conductivity of the Josephson junctions at low bias is strongly suppressed due to the Coulomb blockade of Cooper pair tunnelling.
X H Wang, K A Chao
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High-temperature superconductor vertically-stacked Josephson junctions

Superconductor Science and Technology, 2002
We study vertically-stacked interface-treated Josephson junctions (ITJs). The barriers of ITJs are formed by Ar ion etching and subsequent annealing, not by depositing an artificial barrier. We have investigated the dependences of the junction properties on the processing parameters.
Y Yoshinaga, T Kito, S Izawa, M Maruyama, M Inoue, A Fujimaki, H Hayakawa   +6 more
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Steady-state junction temperatures of semiconductor chips

IEEE Transactions on Electron Devices, 1972
The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions.
R.D. Lindsted, R.J. Surty
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