Results 161 to 170 of about 14,719,810 (262)

First-Digit Distributions of Human Long-Bone Morphometric Parameters: An Exploratory X-Ray-Based Comparison with Benford's Law. [PDF]

Int J Gen Med
Zhi Y, Ji C.
europepmc   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Vanderbilt University Law School Journal of Entertainment and Technology 2009 Fall Symposium Panel - Panel 2

, 2009
Includes descriptive metadata provided by producer in QuickTime movie file: "Law School - 2009 Fall JETLaw Symposium - Vanderbilt University Law School Journal of Entertainment 2009 Symposium Panel - Panel 2 - Vanderbilt University."Law ...
Vanderbilt University. Law School
core  

Photokinetics of Bimolecular Reactions: Predictive Modelling of the Basic Bimolecular Photoreactions XXYY'(Φ,k) and XX'YY'(Φ,k). [PDF]

Molecules
Maafi M.
europepmc   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Revisiting Jonscher's universal power law: a modified formalism with Cole-Cole-type non-Debye dielectric relaxation for α-quartz-type GeO₂. [PDF]

RSC Adv
Karmakar S, Patwari M, Arun SV, Borkar H, Chakraborty B.   +4 more
europepmc   +1 more source

3D Bioprinted Glioblastoma Multiforme Models: How the Extracellular Matrix Glycosignature Influences Drug Response

Advanced Functional Materials, EarlyView.
Aberrant glycosylation in the glioblastoma tumor microenvironment drives therapeutic resistance. Here, a 3D bioprinted model was engineered by incorporating α‐NeuNAc‐(2→3)‐β‐D‐Gal‐ and chondroitin sulfate. Combined multiplex immunofluorescence and synchrotron‐based nanoCT analysis revealed that glycan‐matrix interactions dictate specific drug‐escape ...
Francesca Cadamuro, Marco Piazzoni, Ilaria Borghi, Alberto Baeri, Alessandro Fumagalli, Federica Perillo, Hafiz Muhammad Fahad, Martina Ghizzi, Luca Crippa, Gabriella Nicolini, Angela Bentivegna, Daniele Ramazzotti, Valentina Zuliani, Mirko Rivara, Carlo Giorgio Giussani, Andrea Di Cristofori, Guido Cavaletti, Federica Facciotti, Sobhan Sheikhi, Claire Seydoux, Murielle Salome, Peter Cloetens, Alberto Bravin, Paola Coan, Francesco Nicotra, Laura Russo   +25 more
wiley   +1 more source

A Golden-Ratio Ladder and a Delocalisation-Saturated Participation Bridge for the Hydrogen-Bond Network of Liquid Water. [PDF]

Molecules
Washburn J, Allahyarov E.
europepmc   +1 more source

Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe

Advanced Functional Materials, EarlyView.
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta, Chris Matsumura, Hongbin Yang, Sarah Edwards, Rebeca M. Gurrola, Jiun‐Haw Chu, Hanjong Paik, Yongqiang Wang, David A. Muller, Robert Streubel, Tzu‐Ming Lu, Serena Eley   +11 more
wiley   +1 more source