Results 161 to 170 of about 19,073 (304)
Structural origin of fracture-induced surface charges in piezoelectric pharmaceutical crystals for engineering bulk properties. [PDF]
Das K +8 more
europepmc +1 more source
Fe‐doped Ca2InTaO6 double perovskites are synthesized via solid‐state reaction and systematically investigated. Rietveld refinement confirms orthorhombic Pbnm structure, while optical studies reveal a bandgap narrowing from 3.31 to 2.84 eV. Photoluminescence spectra exhibit strong red emission at 671 nm with optimal intensity at 10 mol% Fe ...
Vanthini Nelson Adoons +6 more
wiley +1 more source
Optically Programmable Smart WSe<sub>2</sub>/hBN Heterostructure Gas Sensors. [PDF]
Ali A +8 more
europepmc +1 more source
ABSTRACT Enhancing the performance of phosphor materials for wide‐color‐gamut and high‐brightness phosphor‐converted light‐emitting diodes (pc‐LEDs) represents a critical materials challenge. Improving quantum efficiency (QE) under concentration quenching constraints and maintaining thermal stability remain primary objectives.
Yuhan Zhou +3 more
wiley +1 more source
Dual-Functional 3D-Nanoprinted AFM Probes for Correlative Magnetic and Conductive Characterization. [PDF]
Seewald LM +3 more
europepmc +1 more source
ABSTRACT This study introduces novel nonequiatomic TiZrCoCrMoCux (x = 0, 5, 10; at%) medium‐entropy alloys (MEAx) tailored for orthopedic implants, synergistically combining the biocompatibility of Ti‐based alloys, the wear resistance of CoCrMo alloys, and the antibacterial/osteogenic attributes of Cu. The alloy's microstructure, mechanical properties,
Hang Yu +9 more
wiley +1 more source
Highly ordered rubbers with a giant elastocaloric effect. [PDF]
Fu Y +14 more
europepmc +1 more source
160 GHz Schottky Diodes from Solution‐Processed IGZO
A simple, scalable method for contact engineering of planar asymmetric nanogap electrodes enables the development of Schottky diodes with a cut‐off frequency of 160 GHz. Applying these diodes to radio‐frequency rectifying circuits yields output voltages in the range of 0.3–0.74 volts.
Lazaros Panagiotidis +17 more
wiley +1 more source
Uni-traveling-carrier photodiode based on MoS<sub>2</sub>/GaN van der Waals heterojunction for high-speed visible-light detection. [PDF]
Kadowaki T +7 more
europepmc +1 more source
A one‐step oblique angle reactive sputtering approach enables simultaneous tuning of bulk and interfacial stoichiometry in a metal oxide/ silicon heterojunction. In case of vanadium oxides, growth angle variation controls the formation of stoichiometric SiO2, ternary SiOx(V) interlayer, and phase purity of vanadium oxide, considerably simplifying the ...
Aparajita Mandal +3 more
wiley +1 more source

