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Imaging integrated circuit dopant profiles with the force-based scanning Kelvin probe microscope
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996 A force-based scanning Kelvin probe microscope has been used to image dopant profiles in silicon for integrated circuit devices on a submicron scale. By measuring the potential difference which minimizes the electrostatic force between a probe and surface of a sample, an estimate of the work function difference between the probe and surface may be made.
Todd Hochwitz +10 more
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Kelvin Probe Force Microscope Observation of Chlorine-Adsorbed TiO2(110) Surfaces
Japanese Journal of Applied Physics, 2008 The rutile titanium dioxide (TiO2) (110) surface exposed to Cl2 gas was examined using scanning probe microscopes. The Cl adatoms formed by Cl2 dissociation were observed as bright spots in empty-state scanning tunneling microscope images. While 94% of the Cl adatoms were on the top of surface Ti atoms, the remaining 6% of the adatoms missed the on-top
Kumiko Hiehata +2 more
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ChemInform, 1998 AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
M. BOEHMISCH +5 more
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Applied Physics Letters, 2008 Detection of individual dopants in the thin silicon layer using Kelvin Probe Force Microscopy is presented. The analysis of the surface potential images taken at low temperatures (13K) on n-type and p-type samples reveals local potential fluctuations that can be attributed to single phosphorus and boron atoms, respectively.
Maciej Ligowski +5 more
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Applied Physics Letters, 2005 We report on a method to quantitatively measure the local energy distribution of surface states density within the band gap of semiconductors using Kelvin probe force microscopy. The method is based on scanning a cross-sectional pn junction; as the tip scans the junction, the surface states position relative to the Fermi level changes, thereby changing
S. Saraf, M. Molotskii, Y. Rosenwaks
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Nanotechnology, 2007 Surface potentials of single wall carbon nanotubes (SWNTs) connecting two metallic electrodes have been investigated by both Kelvin probe force microscopy (KFM) and atomic force microscope potentiometry (AFMP). By comparing the surface potential measurements obtained by both methods, we also studied the major factors affecting the potential ...
Yuji Miyato +3 more
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Direct Observation of Freeze-out Effect in Si by Kelvin Probe Force Microscope
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 2007 M. Ligowski +5 more
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Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008 M. Ligowski +4 more
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Kelvin Probe Force Microscope Measurement Uncertainty
Advanced Materials Research, 2011Kelvin Probe Force Microscopy is an attractive technique for characterizing the surface potential of various samples. The main advantage of this technique is its high spatial resolution together with high sensitivity. However as in any nanoscale measurements also in case of KFM it is extremly difficult to describe the uncertainty of the measurement ...
Maciej Ligowski +2 more
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Implementation, characterization, and applications of a scanning Kelvin probe force microscope.
, 2015 Todd. Hochwitz
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