Results 261 to 270 of about 19,073 (304)
Some of the next articles are maybe not open access.
Journal of Microscopy, 2017
SummaryAn improved setup for accurate near‐field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster‐scan of the KPFM‐AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe ...
N B, Bercu +3 more
openaire +2 more sources
SummaryAn improved setup for accurate near‐field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster‐scan of the KPFM‐AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe ...
N B, Bercu +3 more
openaire +2 more sources
Thin Solid Films, 2006
We have studied grain-shape dependence of Kelvin probe force microscopy of SrBi2Ta2O9 thin films on epitaxial La0.5Sr0.5CoO3/LaAlO3 substrates. By changing the growth condition in pulsed laser deposition, we have grown the SrBi2Ta2O9 thin films with various grain shapes.
J.Y. Son, Bog G. Kim, J.H. Cho
openaire +1 more source
We have studied grain-shape dependence of Kelvin probe force microscopy of SrBi2Ta2O9 thin films on epitaxial La0.5Sr0.5CoO3/LaAlO3 substrates. By changing the growth condition in pulsed laser deposition, we have grown the SrBi2Ta2O9 thin films with various grain shapes.
J.Y. Son, Bog G. Kim, J.H. Cho
openaire +1 more source
Journal of Applied Physics, 2010
The secondary electron emission flux in a scanning electron microscope is a powerful tool for delineation of electrically active dopant concentration, built-in potentials, and surface electric fields in semiconductor junctions. In all the secondary electron images of p-n junctions, the p-doped regions appear brighter than n-doped regions.
I. Volotsenko +8 more
openaire +1 more source
The secondary electron emission flux in a scanning electron microscope is a powerful tool for delineation of electrically active dopant concentration, built-in potentials, and surface electric fields in semiconductor junctions. In all the secondary electron images of p-n junctions, the p-doped regions appear brighter than n-doped regions.
I. Volotsenko +8 more
openaire +1 more source
Kelvin probe force microscopic investigation of graphene-based derivatives
Japanese Journal of Applied Physics, 2020K. Kanishka H. De Silva +3 more
openaire +1 more source
Direct Observation of zirconium nitride hot carriers by Kelvin Probe Force Microscope
Satoshi Ishii +5 more
openalex
Local work function analysis of Pt/TiO2photocatalyst by a Kelvin probe force microscope
Kumiko Hiehata +2 more
openalex +1 more source

