Results 221 to 230 of about 871,021 (251)

Intermediate excited state relaxation dynamics of boron vacancy spin defects in hexagonal boron nitride. [PDF]

open access: yesSci Adv
Konrad P   +7 more
europepmc   +1 more source

Impact of Surface Functionalization on NV Quantum Properties: Implications for Biosensing with Fluorescent Nanodiamonds

open access: yesAdvanced Functional Materials, EarlyView.
Fluorescent nanodiamonds (fNDs) have emerged as an invaluable quantum sensing platform for biological and biochemical systems. This paper investigates the influence of common surface functionalization strategies for bioconjugation on the quantum properties of nitrogen vacancy (NV) centers in nanodiamonds.
Anja Sadžak   +6 more
wiley   +1 more source

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

open access: yesAdvanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato   +10 more
wiley   +1 more source

Risk of diabetic retinopathy progression after YAG laser capsulotomy. [PDF]

open access: yesJ Cataract Refract Surg
Alshaikhsalama AM   +9 more
europepmc   +1 more source

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker   +11 more
wiley   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun   +6 more
wiley   +1 more source

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