Results 191 to 200 of about 70,491 (281)

Determination of lithium concentration in black mass using laser-induced breakdown spectroscopy hand-held instrumentation. [PDF]

Sci Rep
Galli E, Massa M, Zanoletti A, De Iuliis S, Bontempi E, Depero LE, Palleschi V, Borgese L.   +7 more
europepmc   +1 more source

A Portable and Dual‐Button Microneedle Device Enables Intelligent Multimodal Laser Sensing

Advanced Science, EarlyView.
A portable and dual‐button microneedle device enables rapid interstitial fluid sampling. Coupled with multimodal laser sensing and AI‐assisted data processing, the platform enables simultaneous molecular and elemental analysis for minimally invasive and multiplexed health assessment toward point‐of‐care diagnostics.
Yuanchao Liu, Xiujuan Hu, Shengqun Shi, Bowen Li, Zhixing Ge, Yunchen Long, Chaochao Sun, Annan Chen, Bingbing Gao, Lianbo Guo, Condon Lau, Wei Luo, Chwee Teck Lim   +12 more
wiley   +1 more source

Highly sensitive hydrogen analysis employing low pressure laser induced breakdown spectroscopy in helium surrounding gas under electric field. [PDF]

Sci Rep
Karnadi I, Pardede M, Hedwig R, Tanra I, Suliyanti MM, Hadiyanto MY, Jobiliong E, Martoyo I, Lie ZS, Kagawa K, Lie TJ, Kurniawan KH.   +11 more
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

Quantification of modal mineralogy in molybdenite-bearing drill-core samples by laser-induced breakdown spectroscopy. [PDF]

Heliyon
Álvarez J, Velásquez G, Arévalo I, Yáñez J, Sandoval-Muñoz C, Sepúlveda B.   +5 more
europepmc   +1 more source

Laser-induced breakdown spectroscopy in extreme environments

Analytical Sciences, 2023
openaire   +2 more sources

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Fungal elemental profiling unleashed through rapid laser-induced breakdown spectroscopy (LIBS). [PDF]

mSystems
Rush TA, Wymore AM, Rodríguez M, Jawdy S, Vilgalys RJ, Martin MZ, Andrews HB.   +6 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source