Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Highly stable diamagnetically levitated mechanical resonators with large masses exceeding 1.5 gram. [PDF]
Microsyst NanoengRoy P, Yasmin S, Wang Y, Feng PX, Lee J.
europepmc +1 more source
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
Advanced Electronic Materials, EarlyView.A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
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High resolution photoelectron imaging of cryogenically cooled alkaline-earth metal complexes with the BO<sub>2</sub> superhalogen, MBO<sub>2</sub> <sup>-</sup> (M = Ca, Sr, Ba). [PDF]
Chem SciGao HW, Hui J, Zhang XY, Wang LS.
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Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence
Advanced Electronic Materials, EarlyView.Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang +6 more
wiley +1 more source
Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Advanced Electronic Materials, EarlyView.Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Scalable generalized meta-spanners enabling parallel multitasking optical manipulation. [PDF]
Sci AdvLi T +14 more
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Hybrid Heterostructures of Nanostructured Si Membrane and MoS2 for Self‐Powered Photodetectors
Advanced Electronic Materials, EarlyView.A scalable MoS2/Si nanomesh vertical heterostructure is developed for self‐powered photodetection. The nanostructured junction enhances conductivity, expands the active heterointerface, and enables a transition from photovoltaic to avalanche‐assisted operation, delivering markedly improved photoresponse over planar counterparts.
Jingying Liu +8 more
wiley +1 more source
High-purity quantum optomechanics at room temperature. [PDF]
Nat PhysDania L +8 more
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Advancing Energy Materials by In Situ Atomic Scale Methods
Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
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