Results 161 to 170 of about 258,805 (302)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Combination effect of laser diode for photodynamic therapy with doxycycline on a wistar rat model of periodontitis. [PDF]

open access: yesBMC Oral Health, 2021
Astuti SD   +6 more
europepmc   +1 more source

Passivated SiC Surfaces for Photonic and Quantum Applications: Balancing Chemical Stability and Surface Luminescence

open access: yesAdvanced Materials Interfaces, EarlyView.
Low‐temperature passivation of SiC reveals that optical surface quality and chemical stability are not directly correlated. Ar plasma‐treated and SiNx‐passivated surfaces yield the lowest photoluminescence background, whereas CF4 plasma and ALD‐grown dielectrics introduce higher emission.
Marina Scharin‐Mehlmann   +4 more
wiley   +1 more source

3D Printed Multimaterial Microfluidic Transistors

open access: yesAdvanced Materials Technologies, EarlyView.
We introduce a biocompatible, high resolution photopolymer resin that closely mimics the Young's Modulus (elasticity) and reversible stretchability (no hysteresis) of poly(dimethylsiloxane) (PDMS), enabling the fabrication of microfluidic transistors (i.e., microvalves capable of proportional amplification) by multimaterial stereolithography (mSLA ...
Alireza Ahmadianyazdi   +7 more
wiley   +1 more source

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers

open access: yesAdvanced Materials Technologies, EarlyView.
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng   +8 more
wiley   +1 more source

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