Results 171 to 180 of about 10,999 (252)

Fungal elemental profiling unleashed through rapid laser-induced breakdown spectroscopy (LIBS). [PDF]

mSystems
Rush TA, Wymore AM, Rodríguez M, Jawdy S, Vilgalys RJ, Martin MZ, Andrews HB.   +6 more
europepmc   +1 more source

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

Advanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

Application and Research Progress of Laser-Induced Breakdown Spectroscopy in Agricultural Product Inspection. [PDF]

ACS Omega
Wang L, Tolok G, Fu Y, Xu L, Li L, Gao H, Zhou Y.   +6 more
europepmc   +1 more source

Coarsening‐Resistant Ag Sinter Composites: Mechanistic Insights From Different Ag–Additive Systems

Advanced Electronic Materials, EarlyView.
An Ag–WC sintered composite exhibiting superior resistance to thermal coarsening. Different particle‐reinforced Ag sinter composites showed markedly different microstructural responses to thermal aging. The comparison revealed that robust Ag–additive interfaces maintain grain‐boundary pinning, whereas insufficient interfacial stability results in the ...
Yang Liu, Chuantong Chen, Ran Liu, Akitsu Shigetou, Katsuaki Suganuma   +4 more
wiley   +1 more source

Raman microspectroscopy and laser-induced breakdown spectroscopy for the analysis of polyethylene microplastics in human soft tissues. [PDF]

Heliyon
Parobková V, Holub D, Kizovský M, Kalčíková G, Rozman U, Urík M, Novotný K, Samek O, Zikmund T, Pořízka P, Kaiser J.   +10 more
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Qualitative evaluation of trace elements in commercially packaged forms of tobacco using laser-induced breakdown spectroscopy. [PDF]

Sci Rep
Kripa Adlene Edith A, Ongole R, Unnikrishnan VK, Adarsh UK.   +3 more
europepmc   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

Advanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout, Alexis Palais, Driss Mouloua, Mickael Martin, Frédérique Ducroquet, Sébastien Cavalaglio, Badreddine Smiri, Jeremy Da Fonseca, Jeremy Moeyaert, Clara Cornille, Franck Bassani, Charles Leroux, Veronika Letka, Vita Mergner, David Cooper, Evan Oudot, Christophe Duluard, Sophie Barbet, Christophe Jany, Thierry Baron   +19 more
wiley   +1 more source

Compositional analysis of Swertia chirayita medicinal plant using laser-induced breakdown spectroscopy and ICP-MS. [PDF]

PLoS One
Rehman HU, Hassan NU, Jelani M, Alanazi KD, Ahmed N, Ullah TS, Javed MS, Fawy KF.   +7 more
europepmc   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source