Results 131 to 140 of about 25,555 (257)
New AI‐Assisted Approach for Expanding the Solution Space: Application to Lattice Structure Design
This work introduces an innovative framework for designing structured materials by ex panding the design space through reparameterization of qualitative variables into continuous structural descriptors. Combined with machine‐learning‐based prediction and multi‐objective optimization, the approach enables the discovery of novel lattice architectures ...
G. H. Gahimbare +5 more
wiley +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Estimation of Models in a Rasch Family for Polytomous Items and Multiple Latent Variables [PDF]
The Rasch family of models considered in this paper includes models for polytomous items and multiple correlated latent traits, as well as for dichotomous items and a single latent variable. An R package is described that computes estimates of parameters
Zhushan Li +2 more
core +1 more source
Multi-perspective analysis of adiabatic compressed air energy storage system with cascaded packed bed latent heat storage under variable conditions [PDF]
Adiabatic compressed air energy storage (A-CAES) with advanced thermal energy storage systems has enormous potential in applications. In particular, the extent of thermal energy utilization determines the comprehensive performance of an A-CAES system. In
Yang, X. +4 more
core +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li +11 more
wiley +1 more source
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
A Latent Variable Model of Quality Determination [PDF]
Despite substantial interest in the determination of quality, there has been little empirical work in the area. The problem, of course, is the general lack of data on quality.
Paul J. Gertler
core
The continuous latent variable modelling [PDF]
formalism This chapter gives the theoretical basis for continuous latent variable models. Section 2.1 defines intuitively the concept of latent variable models and gives a brief historical introduction to them. Section 2.2 uses a simple example, inspired
n.n.
core
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source

