Results 141 to 150 of about 586 (212)

Directional Flow of Confined Polaritons in CrSBr

open access: yesAdvanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak   +10 more
wiley   +1 more source

Self‐Assembled Inorganic Nanomembrane Tubes: Rolled‐Up Piezoelectrics for Microacoustic Wave‐Based Actuators and Sensors

open access: yesAdvanced Materials, EarlyView.
This study demonstrates a self‐assembly process to generate free‐standing piezoelectric nanomembranes, forming ultracompact microtubular acoustic wave sensors and actuators. The miniaturized 3D piezoelectric platform reported in this work can be applied in telecommunication, energy harvesting, and acoustofluidics. Moreover, the 3D self‐assembly can add
Raphaël C. L‐M. Doineau   +9 more
wiley   +1 more source

Spin‐Split Edge States in Metal‐Supported Graphene Nanoislands Obtained by CVD

open access: yesAdvanced Materials, EarlyView.
Combining STM measurements and ab‐initio calculations, we show that zig‐zag edges in graphene nanoislands grown on Ni(111) by CVD retrieve their spin‐polarized edge states after intercalation of a few monolayers of Au. ABSTRACT Spin‐split states localized on zigzag edges have been predicted for different free‐standing graphene nanostructures.
Michele Gastaldo   +6 more
wiley   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

open access: yesAdvanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu   +14 more
wiley   +1 more source

Sub‐Nanometer Curvature Unlocks Quantum Orbital Flexoelectricity in Graphene

open access: yesAdvanced Materials, EarlyView.
In self‐assembled, reproducible, large‐area, quasi‐pristine graphene nanowrinkles, extreme curvature forces out‐of‐plane π‐electrons toward hybridization, driving a transition from classical to quantum orbital flexoelectricity. As curvature approaches the fundamental physical limit set by the C─C bond length, the resulting polarization increases by ...
Sathvik Ajay Iyengar   +8 more
wiley   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Signatures of Edge States in Antiferromagnetic Van der Waals Josephson Junctions

open access: yesAdvanced Materials, EarlyView.
ABSTRACT The combination of superconductivity and magnetic textures leads to unconventional superconducting phenomena, including new correlated and topological phases. Van der Waals (vdW) materials emerge as a versatile platform for exploring the interplay between these two competing orders.
Celia González‐Sánchez   +10 more
wiley   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

open access: yesAdvanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh   +2 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

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