Results 101 to 110 of about 1,395,634 (216)

Relational Variants of Lattice-Valued F-Transforms

open access: yes, 2019
Two categories of lower and upper lattice-valued F-transforms with fuzzy relations as morphisms are introduced, as generalisations of standard categories of F-transforms with maps as morphisms.
Jiří Močkoř
core   +1 more source

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

open access: yesAdvanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai   +3 more
wiley   +1 more source

A Phosphorylation‐Induced Micellization Switch in the Low‐Complexity Domain of TDP‐43

open access: yesAdvanced Science, EarlyView.
Phosphorylation of TAR DNA‐binding protein's 43 kDa (TDP‐43) low‐complexity domain by casein kinase 1 delta (CK1δ) acts as a molecular switch, redirecting its self‐assembly from macroscopic phase separation toward finite‐sized, spherical block‐copolymer micelles of ∼30 nm.
Rodrigo F. Dillenburg   +16 more
wiley   +1 more source

PolyG Fibrils Coalesce Into Nuclear Ribbons That Engage Proteostasis Machinery in Neuronal Intranuclear Inclusion Disease

open access: yesAdvanced Science, EarlyView.
In NIID, expanded NOTCH2NLC repeats give rise to nuclear polyG inclusions. Tracer‐guided in situ cryo‐electron tomography enables cross‐scale structural analysis from mouse brain to native neuronal nuclei, revealing dense‐core/peripheral‐halo inclusions built from compact polyG ribbons.
Hui Dong   +13 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

open access: yesAdvanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim   +6 more
wiley   +1 more source

A Rigid–Foldable Kirigami‐Inspired Metamorphic Mechanism With Programmable Motion Modes and Self‐Locking

open access: yesAdvanced Science, EarlyView.
Geometric constraint reconfiguration enables a rigid–foldable kirigami‐inspired mechanism to switch between twisting, directional translation, and self‐locking states. By encoding multifunctionality directly into its architecture, the mechanism achieves multimodal motion and passive locking without reassembly, providing a compact platform for adaptive ...
Jianlin Wang, Zhongmin Song, Ketao Zhang
wiley   +1 more source

Syntactic System of lattice-valued Propositional logic based on finite lattice implication algebra

open access: yes, 2004
By taking finite lattice implication algebra as a truth2value field , a syntactic system of lattice2 valued propositional logic based on finite lattice implication algebra was proposed.
Gao, Y, Qin, K, Xu, Y, Ma, J
core  

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

open access: yesAdvanced Science, EarlyView.
This study employs cryogenic magneto‐terahertz nanoscopy to reveal the real‐space electrodynamics of the colossal magnetoresistance transition. By capturing the terahertz electrodynamic evolution of field‐driven spin switching, the work unveils the dissipative dynamics of emergent metallic states, providing a high‐frequency view of coupled spin‐charge ...
Samuel Haeuser   +6 more
wiley   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

open access: yesAdvanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park   +6 more
wiley   +1 more source

Substrate Engineering of SWCNT p–n Junctions for Dual‐Mode Power Generation and Heat‐Flux Sensing

open access: yesAdvanced Science, EarlyView.
Through substrate engineering alone, a single‐walled carbon nanotube p–n junction device switches between two functions under uniform infrared irradiation. A low‐absorbance substrate sustains a central hot junction for continuous power generation, whereas high‐absorbance substrates transiently invert the temperature gradient for sensitive heat‐flux ...
Ryota Tamai   +3 more
wiley   +1 more source

Home - About - Disclaimer - Privacy