Results 141 to 150 of about 1,395,634 (216)

Beyond‐Classical Ferroelectric Metamaterials: 3D‐Printed Planar Lattices With Programmable Electro–Thermo–Mechanical Coupling

open access: yesAdvanced Science, EarlyView.
Planar ferroelectric lattices with rationally‐tailored topology and polarization achieve programmable piezoelectric and pyroelectric properties. Analytical modeling, homogenization, and experiments collectively demonstrate enhanced and tunable longitudinal, transverse, and shear piezoelectric responses, together with substantially improved ...
Jiahao Shi   +6 more
wiley   +1 more source

Two‐Dimensional Flash Memory: Materials, Interfaces, and Storage–Computing Convergence

open access: yesAdvanced Science, EarlyView.
We systematically summarize recent advances in 2D flash memory, highlighting how interface and material engineering can overcome the conventional trade‐offs among speed, power consumption, and reliability in silicon‐based flash, and outlining its potential for high‐performance memory and in‐memory computing applications.
Zhiyuan Wang   +10 more
wiley   +1 more source

Computational and Data‐Driven Strategies for Lignocellulosic Biomass Valorization: From Multiscale Modeling to Digitalized Biorefinery Design

open access: yesAdvanced Science, EarlyView.
This Review critically connects structural recalcitrance, molecular modeling, solvent and catalyst design, pyrolysis, machine learning, reactor simulation, and FAIR digital infrastructure. Emphasis is placed on experimentally validated information transfer across scales, uncertainty and applicability domains, and the recycle, durability, techno ...
Abdullahi Bello Umar   +9 more
wiley   +1 more source

Highly Stable and Non‐Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep‐Potential Floating Gate

open access: yesAdvanced Science, EarlyView.
A deep‐potential metal floating gate integrates electrical programming, optical partial erasure, and synaptic weight modulation in a MoS2/h‐BN/Au transistor. The device provides a 97.6 V memory window, retention beyond 3000 s, endurance over 1600 cycles, and reproducible operation after 200 days of ambient storage.
Shuo Lei   +6 more
wiley   +1 more source

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

open access: yesAdvanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang   +6 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

Bridging Performance and Fate: A Framework for Sustainable, Composite‐Based Flexible Electronic Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley   +1 more source

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