Results 171 to 180 of about 243,020 (269)

Improving energy absorption capability of the hexagonal honeycomb and re-entrant structures using a combined hierarchical design. [PDF]

Sci Rep
Ashrafian MM, Hasanzadeh R.
europepmc   +1 more source

Tuning Redox Dynamics in Cu‐Based Electrocatalysts: Effect of Secondary Metals

Advanced Functional Materials, EarlyView.
Advanced analysis of operando X‐ray absorption spectroscopy data reveals that secondary metals affect the redox processes in Cu‐based catalysts for electrocatalytic CO2 reduction. This influences the amount of oxides formed under pulsed reaction conditions and the distribution of reaction products.
Martina Rüscher, Andrea Martini, Eduardo Ortega, Lichen Bai, Eric Liberra, Daniel Escalera‐López, Hyo Sang Jeon, Antonia Herzog, Clara Rettenmaier, Dorottya Hursán, David Koshy, Mariana Cecilio de Oliveira Monteiro, Timon Wagner, Leon Jacobse, Felix Haase, Arno Bergmann, Janis Timoshenko, Beatriz Roldan Cuenya   +17 more
wiley   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

Advanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim, Jong Bin An, Seok Gyu Hong, Moon Ho Lee, Ju Hyun Lee, Ji Yeong Park, Hwa Seon Kim, I. Sak Lee, Kyungmoon Kwak, Hyun Jae Kim   +9 more
wiley   +1 more source

B-Site Ru Doping in Sr-Substituted LaCoO₃ Perovskite for Enhanced OER Performance: A Combined Experimental and DFT Study. [PDF]

Materials (Basel)
Zhang L, Fang T, Liu C, Wang W, Wang S, Chen Z.   +5 more
europepmc   +1 more source

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

Advanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming, Markus Griesbach, Ralf Moos, Lothar Kador, Anna Köhler   +4 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Defect-Driven Optical Modulation in Rare-Earth-Modified Zn₂SnO₄ Spinels for Advanced Optoelectronic Applications. [PDF]

ACS Omega
Raji RK, Alnahdi NS, Hamam T, Qamhieh N, Najar A, Awwad F, Mahmoud ST.   +6 more
europepmc   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source