Results 151 to 160 of about 148,309 (340)
Through utilizing a proposed rapid room‐temperature precipitation method, the Te4+‐doped Cs2ZrCl6 vacancy‐ordered doubles with intense STE emission were synthesized. Via using the extreme conditions, i.e., temperature and pressure, stimulus, the luminescence properties of the resulting compounds are significantly modulated, endowing their promising ...
Zhiyu Pei +5 more
wiley +1 more source
This study investigates acoustic phonon‑carrier coupling in FAxMA1−xPbBr3 single crystals using time‑domain Brillouin scattering. The results show that increasing the FA content in FAxMA1−xPbBr3 single crystal reduces both the elastic constant and the intrinsic carrier mobility governed by the acoustic phonon‑carrier coupling.
Wei Zhang +7 more
wiley +1 more source
Polymorphic Superparaelectric Engineering Boosting Energy Storage Capacity in BaTiO3‐Based Ceramics
Herein, Ca2+ incorporation promotes the coexistence of CaTiO3‐/BaTiO3‐derived paraferroelectric states, stabilizing cubic‐orthorhombic‐tetragonal polymorphic superparaelectric phases. This minimizes polarization energy barriers, facilitating full polarization saturation without compromising efficiency.
Pan Liu +9 more
wiley +1 more source
Robust and Tailored 1D/3D Heterojunction for Efficient and Stable Perovskite Solar Cells
This study successfully established a robust 1D/3D heterojunction, characterized by a stable 1D phase, favorable lattice matching, strong interface binding, and effective defect passivation. The resulting epitaxial perovskite film demonstrates preferential vertical orientation of (100) facets, thereby facilitating carriers’ transport and stress relief.
Wending Hao +7 more
wiley +1 more source
Numerical analysis of wetting on textured surfaces by Lattice Boltzmann Method
Vincent Neyrand
openalex +1 more source
The barrier layer is designed comprehensively by thermal expansion coefficient and interfacial reaction energy to yield a controlled interfacial reaction. Ultimately, the Co25Fe50Ni25/half‐Heusler joint simultaneously achieves low contact resistivity and high bonding strength.
Jian Liang +11 more
wiley +1 more source
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam +3 more
wiley +1 more source
Particle flow simulation in a channel with symmetric protuberances using combination of lattice Boltzmann and smoothed profile methods [PDF]
A. Kouhestani +3 more
openalex +1 more source
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
Toward learning Lattice Boltzmann collision operators. [PDF]
Corbetta A +5 more
europepmc +1 more source

