Results 151 to 160 of about 483,459 (273)

Toward learning Lattice Boltzmann collision operators. [PDF]

open access: yesEur Phys J E Soft Matter, 2023
Corbetta A   +5 more
europepmc   +1 more source

Cross‐scale Material‐Structure Synergy for 2D Metamaterials: Toward Customizable Intelligent Electromagnetic Manipulation in Multiphysics Fields

open access: yesAdvanced Science, EarlyView.
Recent advances in metasurface‐enabled low‐observable technologies are reviewed from the perspective of cross‐scale material–structure synergy. Electromagnetic, thermal, optical, and acoustic stealth are highlighted together with dynamic tuning, programmable coding, data‐driven inverse design, artificial intelligence, multispectral compatibility, and ...
Shuhao Wang   +5 more
wiley   +1 more source

3D MXene Aerogel Frameworks With In Situ‐Grown BiFeO3 for Synergistically Enhanced Thermoelectric Performance

open access: yesAdvanced Electronic Materials, EarlyView.
A lightweight, 3D MXene aerogel framework integrated with bismuth ferrite was developed to efficiently harvest waste heat. By growing the oxide directly onto the porous aerogel, the composite achieves strong interfacial connections. This unique architecture simultaneously boosts electrical power generation and blocks heat flow, resulting in an ...
Oju Kwon   +4 more
wiley   +1 more source

Enhanced Synthesis of Cs2AgBiBr6 Single Crystals via Controlled Cooling for Enhanced Dual‐Band Light Detection

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a dual‐band photodetector based on the large‐scale, precise synthesis of Cs2AgBiBr6 single crystals. A rapid and efficient synthesis method is demonstrated, yielding high‐quality Cs2AgBiBr6 crystals with an average size of 2 × 2 × 1.5 mm3 and a production yield of 12.66%.
Yezhan Li   +9 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

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