Results 141 to 150 of about 108,372 (285)

Controlled Moderate Interfacial Reaction Facilitates High‐Strength Low‐Resistivity Barrier Layer for Half‐Heusler Thermoelectrics

open access: yesAdvanced Science, EarlyView.
The barrier layer is designed comprehensively by thermal expansion coefficient and interfacial reaction energy to yield a controlled interfacial reaction. Ultimately, the Co25Fe50Ni25/half‐Heusler joint simultaneously achieves low contact resistivity and high bonding strength.
Jian Liang   +11 more
wiley   +1 more source

Toward Predictive Theory in Single‐Atom Catalysis

open access: yesAdvanced Science, EarlyView.
A lifecycle‐oriented framework reframes modeling in single‐atom catalysis. By combining ensemble‐based descriptions with explicit validation against experimental observables, the approach defines the scope of theory across catalyst synthesis, activity, stability, and safety, clarifying where quantitative insight is possible and where interpretation ...
Andrea Ruiz‐Ferrando   +3 more
wiley   +1 more source

Atomic Interlayer Mo–N4 Sites Enable Rapid Charge Transfer and Efficient CO2 Photoreduction

open access: yesAdvanced Science, EarlyView.
This work achieved efficient CO2 activation and ultrafast interlayer electron transport in a 2D COF by constructing atomic‐level Mo‐N4‐induced interlayer electron bridges (IEB), thereby kinetically and thermodynamically co‐driving the photocatalytic coupling of CO2 reduction with 4‐methoxybenzyl alcohol oxidation.
Lijuan Sun   +9 more
wiley   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy   +2 more
wiley   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang   +6 more
wiley   +1 more source

A New Relaxation Time Model for Lattice Boltzmann Simulation of Nano Couette Flows in Wide Range of Flow Regimes

open access: yesJournal of Applied Fluid Mechanics, 2019
The standard LBM with the relaxation time is only able to simulate the flow features in continuum and slip regimes. In the present paper, a new relaxation time formulation considering the rarefaction effect on the viscosity for the lattice Boltzmann ...
S. Ghatreh Samani   +1 more
doaj  

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