Results 141 to 150 of about 20,086 (312)

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Lattice Boltzmann Method

open access: yesScholarpedia, 2010
Sauro Succi   +2 more
openaire   +1 more source

Atomic Interlayer Mo–N4 Sites Enable Rapid Charge Transfer and Efficient CO2 Photoreduction

open access: yesAdvanced Science, EarlyView.
This work achieved efficient CO2 activation and ultrafast interlayer electron transport in a 2D COF by constructing atomic‐level Mo‐N4‐induced interlayer electron bridges (IEB), thereby kinetically and thermodynamically co‐driving the photocatalytic coupling of CO2 reduction with 4‐methoxybenzyl alcohol oxidation.
Lijuan Sun   +9 more
wiley   +1 more source

A Generalized Lattice Boltzmann Method for Three-Dimensional Incompressible Fluid Flow Simulation

open access: yesJournal of Applied Fluid Mechanics, 2009
In this work, a 19-bit Incompressible Generalized Lattice Boltzmann (IGLB) method has been proposed for threedimensional incompressible fluid flow simulation, for the first time.
A.R. Rahmati, Mahmud Ashrafizaadeh
doaj  

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

open access: yesAdvanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen   +8 more
wiley   +1 more source

Numerical simulation of microflow over superhydrophobic surfaces by lattice Boltmann method

open access: yes, 2011
This paper was presented at the 3rd Micro and Nano Flows Conference (MNF2011), which was held at the Makedonia Palace Hotel, Thessaloniki in Greece.
Zhou, W   +2 more
core  

Suppressed Auger Heating of Hot Carriers in Cu‐Doped Colloidal Quantum Wells

open access: yesAdvanced Science, EarlyView.
ABSTRACT Auger heating represents a major bottleneck for hot carrier (HC) relaxation in colloidal quantum wells (CQWs), delaying carrier accumulation in band‐edge states and diminishing performance in light‐emitting applications. To address this issue, we introduce copper doping in CdSe CQWs to create midgap states, which efficiently suppresses Auger ...
Junhong Yu   +6 more
wiley   +1 more source

Phase‐Resolved Defect Transport Mechanisms Governing Asynchronous Ordering in a Eutectic High‐Entropy Alloy

open access: yesAdvanced Science, EarlyView.
Phase‐resolved experiments and atomistic simulations reveal asynchronous ordering behaviors in a eutectic high‐entropy alloy during isothermal annealing. Distinct defect transport mechanisms are identified in coexisting B2 and BCC phases, showing that vacancy and interstitial mediated diffusion governs phase‐dependent thermal stability.
Huiwen Yao   +5 more
wiley   +1 more source

Simulation of the flow and the study of the effects of the surface roughness in isothermal gas flows of micro scale using Lattice Boltzmann method

open access: yes, 2009
This paper was presented at the 2nd Micro and Nano Flows Conference (MNF2009), which was held at Brunel University, West London, UK. The conference was organised by Brunel University and supported by the Institution of Mechanical Engineers, IPEM, the ...
2nd Micro and Nano Flows Conference (MNF2009)   +2 more
core  

Observation of Excitonic Instability in a Monolayer Ta2NiSe5 With Strain Disorder

open access: yesAdvanced Science, EarlyView.
Monolayer Ta2${\rm Ta}_2$NiSe5${\rm NiSe}_5$ sustains an excitonic insulating phase up to 190 K, with Raman signatures of gap opening and critical excitonic fluctuations. Thickness‐independent large gap ratios highlight strong exciton‐phonon coupling, while substrate‐induced strain disorder depresses Tc, establishing monolayer Ta2${\rm Ta}_2$NiSe5${\rm
So Young Kim   +13 more
wiley   +1 more source

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