Results 121 to 130 of about 89,896 (247)

Chemical Doping Engineering of Polarization and Topological Textures in van der Waals Ferroelectric CuInP2S6

Advanced Science, EarlyView.
Our work reports that Li⁺ doping in CuInP2S₆ induces coexistence of high‐ and low‐polarization states, which fosters a rich spectrum of topological polar textures, such as bubbles and labyrinth domains. An unconventional flexoelectric effect is also discovered, where strain gradients can mechanically manipulate these polarization states and their ...
Lei Gao, Wenhao Li, Fei Sun, Ziyi Zhou, Zhihao Shen, Jianwei Liang, He Jiang, Weiming Xiong, Weijin Chen, Xiaoyue Zhang, Yi Zhang, Xinzhi Liu, Yue Zheng   +12 more
wiley   +1 more source

Polymorphic Superparaelectric Engineering Boosting Energy Storage Capacity in BaTiO3‐Based Ceramics

Advanced Science, EarlyView.
Herein, Ca2+ incorporation promotes the coexistence of CaTiO3‐/BaTiO3‐derived paraferroelectric states, stabilizing cubic‐orthorhombic‐tetragonal polymorphic superparaelectric phases. This minimizes polarization energy barriers, facilitating full polarization saturation without compromising efficiency.
Pan Liu, Xiang Ren, Jin Qian, Haihua Huang, Peng Li, Peng Fu, Jigong Hao, Huarong Zeng, Wei Li, Zhenxiang Cheng   +9 more
wiley   +1 more source

Using Dopants as Agents to Probe Key Electronic Properties of Organic Semiconductors

Advanced Electronic Materials, EarlyView.
Dopants are typically used in organic electronics to enhance conductivity, but here their potential is demonstrated as probes for fundamental material properties. By integrating experimental data and multiscale simulations, it is shown how dopant ionization and conductivity measurements enable accurate extraction of ionization potential and Coulomb ...
Artem Fediai, Franz Symalla, Tobias Neumann, Wolfgang Wenzel   +3 more
wiley   +1 more source

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

Advanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang, Daniele Zucchelli, Melissa Berteau‐Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu   +8 more
wiley   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

Advanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy   +3 more
wiley   +1 more source

Lattice Dynamics Across the High‐Pressure Phase Transition in CrTe

Advanced Electronic Materials, EarlyView.
ABSTRACT High‐pressure physics provides a powerful means of tuning interatomic interactions, enabling the discovery of novel structural and physical phenomena in materials. Chromium telluride, a transition metal chalcogenide, is particularly responsive to such external stimuli, exhibiting a broad spectrum of pressure‐, temperature‐, and stoichiometry ...
Costanza Borghesi, Giacomo Giorgi, Daniele Varsano, Riccardo Rurali   +3 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

High‐Throughput Screening and Characterization of Non‐Flammable Na‐Cl Solid Electrolytes

Advanced Electronic Materials, EarlyView.
A Na‐Cl solid electrolyte with high ionic conductivity is screened from a structural database using force‐field molecular dynamics (MD) simulations and density functional theory (DFT)‐MD calculations. Na3La5Cl18 is identified, synthesized, and characterized.
Naoto Tanibata, Naoki Nonaka, Daisuke Urushihara, Hayami Takeda, Ryo Kobayashi, Naoaki Kuwata, Masanobu Nakayama   +6 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source