Results 221 to 230 of about 2,466,647 (365)
This review provides an in‐depth understanding of all theoretical reaction mechanisms to date concerning zinc–iodine batteries. It revisits the inherent issues and solutions of zinc–iodine batteries from the perspective of industrial application. By integrating existing examples of energy storage applications, it identifies the challenges faced on the ...
Haokun Wen+10 more
wiley +1 more source
Field Theory of Quantum Antiferromagnets : From the Triangular to the Kagome Lattice
D. Shubashree, Ravi Shankar
openalex +2 more sources
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai+8 more
wiley +1 more source
Disordered RKKY Lattice Mean Field Theory for Ferromagnetism in Diluted Magnetic Semiconductors [PDF]
Donald Priour, E. H. Hwang, S. Das Sarma
openalex +1 more source
A new alloy‐oxide vertically aligned nanocomposite (VAN) thin film with two immiscible non‐noble metal elements of Co and Cu embedded in BaTiO3 (BTO) matrix is designed and fabricated, which presents interesting magnetic, ferroelectric, and optical properties.
Jijie Huang+7 more
wiley +1 more source
Mean-field theory of Bose–Fermi mixtures in optical lattices [PDF]
H. Fehrmann+4 more
openalex +1 more source
Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang+14 more
wiley +1 more source
The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee+5 more
wiley +1 more source
Neural Activity in Quarks Language: Lattice Field Theory for a Network of Real Neurons. [PDF]
Bardella G+7 more
europepmc +1 more source