Results 251 to 260 of about 7,707 (307)
The facet‐engineered ZnO/Zn3In2S6 heterostructure, dominated by {001} plane coupling, exposes abundant unsaturated Zn sites with elongated Zn─O bonds, directing photoexcited charge carriers along an S‐scheme pathway and suppressing recombination. Enhanced interfacial Zn adsorption toward bisphenol A and methylene blue further synergistically promotes ...
Yang Yang +6 more
wiley +1 more source
Revealing the topological nature of entangled orbital angular momentum states of light. [PDF]
de Mello Koch R +5 more
europepmc +1 more source
This study shows that lizard osteoderm capping tissue is a hyper‐mineralized hydroxyapatite layer consistently covering the superficial osteoderm surface in those species studied here, yet it varies greatly in morphology, nanostructure, and mechanical performance across species.
Adrian Rodriguez‐Palomo +10 more
wiley +1 more source
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff +9 more
wiley +1 more source
Charm rescattering in B 0 → K 0 ℓ ¯ ℓ : an improved analysis. [PDF]
Isidori G, Polonsky Z, Tinari A.
europepmc +1 more source
Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl +20 more
wiley +1 more source
High sensitivity pressure and temperature quantum sensing in pentacene-doped p-terphenyl single crystals. [PDF]
Singh H +8 more
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Strain engineering of topological transitions in 2D materials: a multi-band approach. [PDF]
Azizi F.
europepmc +1 more source

