Results 231 to 240 of about 4,839,794 (300)

Atomic-Scale Mechanism of Titanium-Induced Frictional Removal of Silicon Carbide: A Molecular Dynamics Study. [PDF]

Materials (Basel)
Ling X, Tian W, Li Y, Li L, Dai J, Li K, Li Z.   +6 more
europepmc   +1 more source

Surface-driven size scaling of the lattice parameter, Debye-Waller coefficient and microstrain in nanocrystals. [PDF]

Acta Crystallogr A Found Adv
Subbareddy S, Agnolin E, Malagutti MA, Ataollahi N, Dinnebier R, Scardi P.   +5 more
europepmc   +1 more source

High-temperature superconductivity at 100K in La_3-xNd_xNi₂O₇. [PDF]

Nat Commun
Qiu Z, Chen J, Semenok DV, Zhong Q, Zhou D, Li J, Ma P, Huang X, Huo M, Xie T, Chen X, Mao HK, Struzhkin VV, Sun H, Wang M.   +14 more
europepmc   +1 more source

Evaluation of the Compressive Behavior of the Uniform and Graded Octet Lattice Cylindrical Shell Materials. [PDF]

Materials (Basel)
Xu H, Yu C, Luo W, Cao W, Cao X, He C.
europepmc   +1 more source

Tackling real-world crystal structure prediction from powder X-ray diffraction data.

Digit Discov
Johansen FL, Sapnik AF, Dam EB, Selvan R, Jensen KMØ.   +4 more
europepmc   +1 more source

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The Lattice Parameter of Silicon: A Survey

Metrologia, 1994
Highly purified silicon single crystals are excellent standards for length measurements at the atomic scale and the value of the silicon (220) lattice spacing is an important item of information for the establishment of a self-consistent set of fundamental physical constants.
BECKER P, MANA, GIOVANNI
openaire   +1 more source

On the lattice parameters of GaN

Applied Physics Letters, 2007
The lattice parameters of low-defect density, undoped bulk GaN fabricated by hydride vapor phase epitaxy (HVPE) on (0001) sapphire and subsequent substrate removal, are precisely determined using high-resolution x-ray diffraction. The obtained values, c=5.18523Å and a=3.18926Å, are compared with the lattice parameters of freestanding HVPE GaN from ...
V. Darakchieva, B. Monemar, A. Usui
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The lattice parameter of tantalum

Scripta Metallurgica, 1977
The lattice parameter, a/sub 0/, for tantalum was determined using the Bond technique. The large tantalum single crystal, had been decarburized and then annealed at 2600/sup 0/C in a vacuum better than 10/sup -10/ torr for removal of oxygen and nitrogen after grinding.
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