Results 261 to 270 of about 416,793 (324)

Pushing the Detailed Balance Limit in III-V Semiconductor Photoconversion with Bandgap-Engineering Multijunction Architectures. [PDF]

Materials (Basel)
Gao X, Yin Y, Yang B, Zhang C, Zhou W, Tong J, Chu J.   +6 more
europepmc   +1 more source

Symmetry‐Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two‐Dimensional Limit

Advanced Science, EarlyView.
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui, Ziye Zhu, Xunkai Duan, Bowen Hao, Xianzhang Chen, Jiayong Zhang, Tong Zhou   +6 more
wiley   +1 more source

Microscopic study of the intermediate mixed state in intertype superconductors. [PDF]

Beilstein J Nanotechnol
Neverov VD, Kalashnikov AV, Krasavin AV, Vagov A.   +3 more
europepmc   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Modulation of electronic structure via dual moiré patterns in twisted 1<i>T</i>-TaSe₂. [PDF]

Proc Natl Acad Sci U S A
Liu Y, Zheng Y, Yang K, Zhang W, Wu Z, Gao J, Luo X, Sun Y, Zhang J, Yin Y.   +9 more
europepmc   +1 more source

Enhanced Energy Transfer from a Metal–Organic Framework to a Highly Confined Organic Phosphorescent Dye

Advanced Science, EarlyView.
A phosphorescent dye was designed to fit in a hand‐to‐glove fashion into the 1D‐pore channels of MIL‐68(In). We synthesized MIL‐68(In) as powder and thin films, loaded the dye into the pores with controlled packing, and found that the phosphorescence and quantum yield are enhanced.
Bahram Hosseini Monjezi, Thomas Kasper, Gloria Hong, Changfeng Si, Robert Oestreich, Oliver Weingart, Peter G. Weidler, Christof Wöll, Eli Zysman‐Colman, Christoph Janiak, Stefan Bräse, Klaus Müller‐Buschbaum, Alexander Knebel   +12 more
wiley   +1 more source

Frustrated magnetism in 227 rare-earth iridium pyrochlores. [PDF]

Commun Chem
Klicpera M.
europepmc   +1 more source

FeCoNiCuPt High‐Entropy Alloy Boosts Photocatalytic Hydrogen Production on Protonated Graphitic Carbon Nitride

Advanced Science, EarlyView.
In this study, FeCoNiCuPt high‐entropy alloy particles (HEA) are loaded onto protonated g‐C3N4 nanosheets (HCN NSs) to construct HEA/HCN composites through an electrostatic self‐assembly method. Protonation treatment enriches the surface of g‐C3N4 nanosheets with abundant active sites and enhances their interfacial charge separation capability ...
Yunzhu Zang, Jiali Ren, Yanjun Xue, Jian Tian   +3 more
wiley   +1 more source

Discovery of high-temperature charge order and time-reversal symmetry-breaking in the kagome superconductor YRu₃Si₂. [PDF]

Nat Commun
Král P, Graham JN, Sazgari V, Plokhikh I, Lukovkina A, Gerguri O, Biało I, Doll A, Martinelli L, Oppliger J, Islam SS, Spitaler M, Wang K, Salamin M, Luetkens H, Khasanov R, Zimmermann MV, Yin JX, Wang Z, Chang J, Monserrat B, Gawryluk D, von Rohr FO, Kim SW, Guguchia Z.   +24 more
europepmc   +1 more source

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

Advanced Science, EarlyView.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen, Deyang Qin, Er Nie, Jiahua Tao, Hidefumi Akiyama, Junhao Chu, Shaoqiang Chen   +6 more
wiley   +1 more source