Results 201 to 210 of about 9,336 (310)

Exploring Ohm's Law: The Randomness of Determinism. [PDF]

open access: yesEntropy (Basel)
Cuadras A   +2 more
europepmc   +1 more source

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

open access: yesAdvanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan   +14 more
wiley   +1 more source

Ionic Highways under Multivariate‐Coupled Strategies: Ultrahigh Power Generation from Industrial Waste Liquors Using Robust COF Membranes

open access: yesAdvanced Science, EarlyView.
This study presents a multivariate‐coupled strategy to fabricate TB‐COF membranes with tunable charge density via uniformly distributed Bpy groups, enabling efficient ion transport and energy harvesting. The robust β‐ketoenamine‐linked structure ensures stability, achieving power outputs of 53.08 W m−2 (pH 4), 190.52 W m−2 (low‐grade heat), and 258.81 ...
Hongyan Qi   +13 more
wiley   +1 more source

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka   +6 more
wiley   +1 more source

Thickness‐Driven Modulation of Electronic Transport in SnSe2‐grown Films by Low‐Temperature Atomic Layer Deposition

open access: yesAdvanced Electronic Materials, EarlyView.
Low‐temperature ALD enables scalable growth of SnSe2 films with precise thickness and crystallinity control, essential for nanoelectronics. Using a reactive Se precursor, films transition from nearly defect‐free single crystals (∼20 nm) to polycrystalline (∼100 nm) with thickness, directly impacting transport properties.
Alejandra Ruiz‐Clavijo   +14 more
wiley   +1 more source

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