Results 231 to 240 of about 101,952 (329)

Resolving the Capacity‐Stability‐Cost Trilemma in Multi‐Principal‐Element Hydrogen Storage Alloys Through Multi‐Objective Optimization

open access: yesAdvanced Science, EarlyView.
This work presents a paradigm‐shifting multi‐objective optimization strategy for hydrogen storage materials, simultaneously addressing the intrinsic capacity‐stability‐cost trade‐off through precisely engineered Ti‐Zr‐Mn‐Cr‐VFe multi‐principal‐element alloys in C14 Laves phases.
Panpan Zhou   +10 more
wiley   +1 more source

Hot‐Pressing Annealing‐Induced Light Utilization Enhancement and Crystallinity Optimization Enable High‐Performance Narrowband Ultraviolet Photodetectors for Real‐Time Ultraviolet Radiation Monitors

open access: yesAdvanced Science, EarlyView.
By utilizing a hot‐pressing (HP) annealing strategy, Cs3Cu2I5 films with larger grains vertically spanning the entire thickness are fabricated. Because HP annealing enhances light utilization and charge transport in Cs3Cu2I5/GaN heterojunction, the HP device achieves superior detection performance while maintaining narrowband photoresponse to UVA/UVB ...
Jingli Ma   +13 more
wiley   +1 more source

Type‐I Heterostructure CdZnS/ZnS Core/Shell Quantum Dots Scintillators for Stable, High‐Resolution, and Real‐Time X‐Ray Imaging

open access: yesAdvanced Science, EarlyView.
Ultra‐bright Cd0.27Zn0.73S/7 ML‐ZnS core/shell quantum dots exhibit a photoluminescence quantum yield exceeding 96% and a fourfold enhancement in radioluminescence intensity compared to CsPbBr3. Variable‐temperature photophysical analysis reveals that the narrowband emission originates from direct recombination of edge excitons.
Ouyang Wang   +6 more
wiley   +1 more source

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka   +6 more
wiley   +1 more source

Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
A low‐temperature and high‐vacuum annealing strategy precisely tunes ultrathin InSe device properties. It induces effective n‐type doping in InSe, enhancing mobility and photoresponsivity by one to two orders of magnitude. XPS analysis confirms that the controlled generation of Se vacancies (VSe) drives these enhancements by modulating charge transport
Yi Liu   +9 more
wiley   +1 more source

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