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Electronic properties of layered phosphorus heterostructures

Physical Chemistry Chemical Physics, 2017
By using ab initio approaches, the electronic properties of vertical heterostructured compounds of different structural phases of layered phosphorus have been studied.
Ruge Quhe   +3 more
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Polarons in the layered electron gas

Physical Review B, 1991
In a layered electron gas, optical phonons which vibrate with their polarization parallel to the c axis are relatively unscreened when the conduction electrons can move only within the planes. We calculate the electron-phonon interaction between the conduction electrons and these parallel phonons. We show that the interaction is very weak.
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Electron superconductivity in coupled electron-hole layers

Physical Review B, 1998
We investigate superconducting pairing of electrons when coupled to an adjacent layer of holes in a GaAs semiconductor heterostructure. When the density of the electrons is much higher than the density of holes, the repulsive electron-electron interaction is reduced by dynamical coupling to the strongly correlated holes. For the effective-mass ratio of
J. S. Thakur, NEILSON, DAVID, M. P. Das
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Electron-electron scattering in silicon inversion layers

Journal of Physics C: Solid State Physics, 1983
The authors present the results of an investigation of the rate of electron-electron scattering in the two-dimensional electron gas of the Si inversion layer. The electron-electron scattering rate was extracted by analysis of the negative magnetoresistance in the regime of weak localisation when kFl>1, where kF is the Fermi wavevector and l is the mean
R A Davies, M Pepper
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Localization and electron-electron interactions in few-layer epitaxial graphene

Nanotechnology, 2014
This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two ...
Shun-Tsung, Lo   +8 more
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Electronic conduction in the layered semiconductor MnPS3

Journal of Physics: Condensed Matter, 1989
Thermopower, conductivity and photoconductivity measurements as a function of temperature, from 130 to 320 degrees C, have been carried out on manganese thiophosphate, MnPS3. The transport mechanisms involved in distinct temperature ranges and under different illumination conditions have been identified.
GRASSO, Vincenzo   +4 more
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Electronic Effects in the Electric Double Layer

Chemical Reviews, 1996
All electrochemical reactions take place at the interface between an electronic conductor, the electrode, and an ionic conductor, the electrolyte. Since the course of these reactions and their variation with the electrode potential depend on the distribution of the particles and the charges in this interfacial region, its structure is of paramount ...
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Electronic structure of layered compounds

JETP Letters, 2006
The electronic structure of the intercalated graphite compounds XC6 (X = Ca, Sr, Ba, Yb, and La) has been studied using the linearized augmented plane-wave method. It has been found that the electronic structure of the carbon layers in these compounds is qualitatively different from a two-dimensional graphite structure. A lower critical superconducting-
Yu. B. Kudasov, A. S. Korshunov
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Shielding by an electron surface layer

Physical Review B, 1978
We seek to determine whether the shielding observed in the electron free-fall experiment could be performed by electrons in a surface layer. An idealized model is used to estimate the shielding of the uniform electric field produced by the gravitational compression of the ionic lattice. We allow for the possibility that the charges in the surface layer
Richard Squier Hanni, John M. J. Madey
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Hot electrons in layered semiconductors

Physics Today, 1980
As electronic systems—and especially computers—are used more and more widely in almost all areas of endeavor and daily life, the semiconductor technology on which they are based is being pushed to ever larger-scale integration and ever greater miniaturization.
Karl Hess, Nick Holonyak
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