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Electronic properties of layered phosphorus heterostructures
Physical Chemistry Chemical Physics, 2017By using ab initio approaches, the electronic properties of vertical heterostructured compounds of different structural phases of layered phosphorus have been studied.
Ruge Quhe +3 more
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Electron superconductivity in coupled electron-hole layers
Physical Review B, 1998We investigate superconducting pairing of electrons when coupled to an adjacent layer of holes in a GaAs semiconductor heterostructure. When the density of the electrons is much higher than the density of holes, the repulsive electron-electron interaction is reduced by dynamical coupling to the strongly correlated holes. For the effective-mass ratio of
J. S. Thakur, NEILSON, DAVID, M. P. Das
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Electron-electron scattering in silicon inversion layers
Journal of Physics C: Solid State Physics, 1983The authors present the results of an investigation of the rate of electron-electron scattering in the two-dimensional electron gas of the Si inversion layer. The electron-electron scattering rate was extracted by analysis of the negative magnetoresistance in the regime of weak localisation when kFl>1, where kF is the Fermi wavevector and l is the mean
R A Davies, M Pepper
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Localization and electron-electron interactions in few-layer epitaxial graphene
Nanotechnology, 2014This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two ...
Shun-Tsung, Lo +8 more
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Electronic Effects in the Electric Double Layer
Chemical Reviews, 1996All electrochemical reactions take place at the interface between an electronic conductor, the electrode, and an ionic conductor, the electrolyte. Since the course of these reactions and their variation with the electrode potential depend on the distribution of the particles and the charges in this interfacial region, its structure is of paramount ...
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Electronic conduction in the layered semiconductor MnPS3
Journal of Physics: Condensed Matter, 1989Thermopower, conductivity and photoconductivity measurements as a function of temperature, from 130 to 320 degrees C, have been carried out on manganese thiophosphate, MnPS3. The transport mechanisms involved in distinct temperature ranges and under different illumination conditions have been identified.
GRASSO, Vincenzo +4 more
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On Electronic and Transport “Anomalies” in Layered Oxides
Journal of Superconductivity, 1999We briefly discuss some electronic and transport "anomalies" observed in superconducting perovskites. In particular we consider: (i) the complex electronic (and crystallographic) phase diagram, (ii) the symmetry of the gap with a special emphasis on the evidence for s-wave component in various experiments, and (iii) non-Fermi-liquid transport in ...
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ELECTRONIC STRUCTURE OF STRAINED SILICON LAYERS
2014Recent research on thin silicon layers, flanked with crystalline silicon oxide, reviled that certain interfaces cause strain in the silicon layer. That strain can be reduced by deformations in the silicon layer. Here we report the influence of deformations of the thin silicon layer on its electronic structure.
Pivac, Branko, Kovačević, Goran
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