Results 211 to 220 of about 538,693 (249)
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Hot electrons in layered semiconductors
Physics Today, 1980As electronic systems—and especially computers—are used more and more widely in almost all areas of endeavor and daily life, the semiconductor technology on which they are based is being pushed to ever larger-scale integration and ever greater miniaturization.
Karl Hess, Nick Holonyak
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Electronic conduction in the layered semiconductor MnPS3
Journal of Physics: Condensed Matter, 1989Thermopower, conductivity and photoconductivity measurements as a function of temperature, from 130 to 320 degrees C, have been carried out on manganese thiophosphate, MnPS3. The transport mechanisms involved in distinct temperature ranges and under different illumination conditions have been identified.
GRASSO, Vincenzo +4 more
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Electron locking in layered structures
Physica B: Condensed Matter, 2000Abstract We describe a novel state of electrons and phonons arising in layered structures, like cuprates (HTSC) and semiconductor superlattices (SSL) due to electron–phonon interactions (which can be strongly enhanced by a strong magnetic field). These states are characterized by a localization of phonons and a self-trapping [1] , [2] , [3] , [4] ,
F.V Kusmartsev, H.S Dhillon
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Stability of laminar electron layers
The Physics of Fluids, 1984The stability of a finite thickness, laminar cylindrical shell of electrons rotating azimuthally and enclosed in a coaxial waveguide is considered. The equilibrium rotation of the electrons is supported either by a radial electric field, an axial magnetic field, or a combination of both.
Chernin, D., Lau, Y. Y.
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Electron scattering by a crystal layer
Theoretical and Mathematical Physics, 2013zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Tinyukova, T. S., Chuburin, Yu. P.
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ELECTRONIC STRUCTURE OF STRAINED SILICON LAYERS
2014Recent research on thin silicon layers, flanked with crystalline silicon oxide, reviled that certain interfaces cause strain in the silicon layer. That strain can be reduced by deformations in the silicon layer. Here we report the influence of deformations of the thin silicon layer on its electronic structure.
Pivac, Branko, Kovačević, Goran
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Electron focusing in layered conductors
Physica B: Condensed Matter, 1996Abstract The electron focusing effect in layered metals is investigated theoretically. The singularities of the dependence of the signal at the measuring contact on the magnetic field, which do not occur in isotropic conductors, are predicted.
Yu.A. Kolesnichenko, Tesgera Bedassa
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Stability of Thin Electron Layers
The Physics of Fluids, 1962An instability that consists of a bunching transverse to the directed motion of an infinitely thin layer of electrons is investigated theoretically. The initial model is a plane sheet, infinite in extent, and neutralized by positive ions. This configuration is found to be unstable if all electrons travel with the same relativistic velocity.
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Electron correlations in inversion layers
Journal of Physics C: Solid State Physics, 1976The two-dimensional electron gas (2DEG) is a widely used model for the electrons in the inversion layer of certain MOSFET devices. The sensitivity of a number of physical quantities of the 2DEG to a proper treatment of many-body effects has been examined.
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Strained-Layer Electronics and Optoelectronics
Picosecond Electronics and Optoelectronics, 1991Strained-layer epitaxy involves more than the dislocation-free growth of dissimilar materials: effective strained-layer epitaxy exploits lattice-mismatch-induced strain to fine-tune material properties. This paper describes strained-layer epitaxy and describes its application to electronic and optoelectronic device to improve performance.
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