Results 121 to 130 of about 88,447 (266)

Scalable Conformal Electronics Based on Roll-to-Roll Exfoliated van der Waals Semiconductors. [PDF]

ACS Nano
Sozen Y, Zamora-Amo E, Riquelme JJ, Castellanos-Gomez A.   +3 more
europepmc   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Convergence of Soft Electronics and Artificial Intelligence: From Materials to Intelligent Systems. [PDF]

Nanomicro Lett
Park H, Choi G, Yoon S, Lee D, Ko SH.
europepmc   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

TiO₂ nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory. [PDF]

Nano Converg
Kang H, Kwak J, Kim G, Lee S, Kim Y, Park S, Lim S, Seo K, Kim W, Ha D, Ahn J, Jeon S.   +11 more
europepmc   +1 more source

Transparent Deformable Thin Film Electric Heater for Stable and Accurate Control of High Temperatures

Advanced Functional Materials, EarlyView.
Au/GaOx‐based transparent heaters combine high optical transmittance and low sheet resistance with exceptional thermal stability up to 521°C for over 6 h. The interfacial GaOx layer suppresses dewetting of Au and enhances adhesion, ensuring mechanical robustness during deformation and reliability for real‐world applications including grilling ...
Younghyun Lee, Huisim Moon, Yeongseo Jin, Woosung Cho, Geonwoo Kim, Gihyeok Eom, Michael D. Dickey, Minsik Kong, Unyong Jeong   +8 more
wiley   +1 more source

Ga-Based Liquid Metals: Advances in Interface Thermal and Electrical Regulations for Power Electronics Integration. [PDF]

Materials (Basel)
Liu C, Liu T, Huang Z, Li X, Zheng J, Li G, Wang G, Liu W, Liu C.   +8 more
europepmc   +1 more source

Intrinsic Photoactive Star ZnPc–Poly(glutamate) Nanoplatforms for Multimodal Glioblastoma Therapy and Brain‐Targeted Delivery

Advanced Functional Materials, EarlyView.
An intrinsic photoactive star‐shaped zinc phtalocyanine‐poly(L‐glutamic acid) (ZnPc‐PGA) nanoplatform for multimodal glioblastoma (GBM) therapy and brain‐targeted elivery. A ZnPc‐PGA‐based multifunctional theranostic nanocarrier platform enables image‐guided, multimodal GBM therapy. ZnPc‐PGA nanocarriers support the integration of fluorescence imaging,
Amina Benaicha‐Fernández, Teodora Ranđelović, Ana Armiñán, Víctor Sebastián, Manuel Fuentes, Cristián Huck‐Iriart, Esther Masiá, Paula Carrascosa‐Marco, Pablo Juanes‐Velasco, Snežana Đorđević, Clara Bayona, Ignacio Ochoa, Maria Medel, Inmaculada Conejos‐Sánchez, María J. Vicent   +14 more
wiley   +1 more source

Highly conductive and ultrarobust elastic conductors for stretchable electronics. [PDF]

Sci Adv
Zheng T, Xiang S, Shi Q, Li J, Wei X, Liu L, Xu C, Duan S, Chen P, Xie X, Sun L, Wu J.   +11 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source