Results 261 to 270 of about 4,291,211 (383)

Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications

open access: gold
Ndembi Ignoumba-Ignoumba   +9 more
openalex   +1 more source

Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics

open access: yes, 2015
A. Bulusu   +8 more
semanticscholar   +1 more source

Strategies to Design and Optimize Artificial Antigen‐Presenting Cells for T Cell Expansion in Cancer Immunotherapy

open access: yesAdvanced Functional Materials, EarlyView.
This review highlights recent advances in engineering artificial antigen‐presenting cells (aAPCs) as alternatives to dendritic cells for T cell expansion. Key design principles inspired by the immunological synapse are discussed, with emphasis on strategies for polyclonal and antigen‐specific T cell expansion.
Nguyen Thi Nguyen, Yu Seok Youn
wiley   +1 more source

Field-programmable robotic folding sheet. [PDF]

open access: yesNat Commun
Park H   +7 more
europepmc   +1 more source

The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

open access: hybrid, 2019
Debdeep Jena   +9 more
openalex   +1 more source

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

open access: yesJournal of the American Chemical Society, 2017
Akinola D Oyedele   +16 more
semanticscholar   +1 more source

High‐Entropy Magnetism of Murunskite

open access: yesAdvanced Functional Materials, EarlyView.
The study of murunskite (K2FeCu3S4) reveals that its magnetic and orbital order emerges in a simple I4/mmm crystal structure with complete disorder in the transition metal positions. Mixed‐valence Fe ions randomly occupy 1/4 of the tetrahedral sites, with the remaining 3/4 being filled by non‐magnetic Cu+ ions.
Davor Tolj   +18 more
wiley   +1 more source

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