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Solid-State Electronics, 1988
Abstract The “molecular dynamics” method combined with Ensemble Monte Carlo, which has previously been used to investigate the effects of electron-electron Coulomb forces in a homogenous state, is applied to a simulation of the effect of mutual Coulomb scattering of the electrons in two parallel semiconductor layers separated by a thin dielectric ...
Carlo Jacoboni, Peter J. Price
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The inter-layer local-field corrections of weakly coupled electron-electron and electron-hole layers

Journal of Physics: Condensed Matter, 1998
We propose a simple analytical expression for the inter-layer local-field correction (LFC) for weakly coupled two-layer systems and develop a sum-rule version of the self-consistent approach of Singwi, Tosi, Land, and Sjolander. On the basis of the approximate approach, the inter-layer LFC is investigated for electron-electron and electron-hole layers ...
Bing Dong, X L Lei
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Electron-electron scattering in silicon inversion layers

Journal of Physics C: Solid State Physics, 1983
The authors present the results of an investigation of the rate of electron-electron scattering in the two-dimensional electron gas of the Si inversion layer. The electron-electron scattering rate was extracted by analysis of the negative magnetoresistance in the regime of weak localisation when kFl>1, where kF is the Fermi wavevector and l is the mean
R A Davies, M Pepper
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Electron superconductivity in coupled electron-hole layers

Physical Review B, 1998
We investigate superconducting pairing of electrons when coupled to an adjacent layer of holes in a GaAs semiconductor heterostructure. When the density of the electrons is much higher than the density of holes, the repulsive electron-electron interaction is reduced by dynamical coupling to the strongly correlated holes. For the effective-mass ratio of
J. S. Thakur, NEILSON, DAVID, M. P. Das
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