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The inter-layer local-field corrections of weakly coupled electron-electron and electron-hole layers
Journal of Physics: Condensed Matter, 1998We propose a simple analytical expression for the inter-layer local-field correction (LFC) for weakly coupled two-layer systems and develop a sum-rule version of the self-consistent approach of Singwi, Tosi, Land, and Sjolander. On the basis of the approximate approach, the inter-layer LFC is investigated for electron-electron and electron-hole layers ...
B Dong, XL(雷啸霖) Lei
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Advanced Electronic Materials, 2019
Lowering the programing power consumption is of importance to capacitate high‐efficiency flexible neuromorphic electronics. However, this remains particularly challenging for organic flexible memristor due to its high reset current.
Qingyu Chen+9 more
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Lowering the programing power consumption is of importance to capacitate high‐efficiency flexible neuromorphic electronics. However, this remains particularly challenging for organic flexible memristor due to its high reset current.
Qingyu Chen+9 more
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Correlations in coupled layers of electrons and holes
Physical Review B, 1994We investigate interparticle correlations for two layers of charge-carrier liquid trapped in adjacent wells of a gallium arsenide heterostructures. We determine in the absence of appreciable tunneling the static polarizability, the pair correlation functions, and the local-field corrections both within a layer and between the layers.
J. Szymanski+2 more
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Electronic Structures of Layered Polysilanes
The Journal of Physical Chemistry, 1995AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
F. Buda, J. R. Dahn, J. S. Tse
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Electron-electron scattering in silicon inversion layers
Journal of Physics C: Solid State Physics, 1983The authors present the results of an investigation of the rate of electron-electron scattering in the two-dimensional electron gas of the Si inversion layer. The electron-electron scattering rate was extracted by analysis of the negative magnetoresistance in the regime of weak localisation when kFl>1, where kF is the Fermi wavevector and l is the mean
R A Davies, Michael Pepper
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Electron states in disordered layers [PDF]
The authors discuss the application of the first-principles Korringa-Kohn-Rostoker coherent potential approximation to the calculation of the electronic structure of substitutionally disordered alloys with layer geometries (surfaces, interfaces etc)-the LKKRCPA.
J H Kaiser, R J Blake, P J Durham
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Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics
Advanced Materials Interfaces, 2019Due to the lack of surface dangling bonds of 2D materials such as graphene, hexagonal boron nitride, MoS2 etc., deposition of high‐κ dielectrics directly on such 2D materials by atomic layer deposition (ALD) is difficult and a nucleation layer is usually
Na Li+9 more
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Cellulose‐Based Flexible Functional Materials for Emerging Intelligent Electronics
Advances in Materials, 2020There is currently enormous and growing demand for flexible electronics for personalized mobile equipment, human–machine interface units, wearable medical‐healthcare systems, and bionic intelligent robots.
Dawei Zhao+5 more
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Electronic structure of layered compounds
JETP Letters, 2006The electronic structure of the intercalated graphite compounds XC6 (X = Ca, Sr, Ba, Yb, and La) has been studied using the linearized augmented plane-wave method. It has been found that the electronic structure of the carbon layers in these compounds is qualitatively different from a two-dimensional graphite structure. A lower critical superconducting-
A. S. Korshunov, Yu. B. Kudasov
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