Results 41 to 50 of about 538,693 (249)
Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase
, 2016 Producing a usable semiconducting form of graphene has plagued the development of graphene electronics for nearly two decades. Now that new preparation methods have become available, graphene's intrinsic properties can be measured and the search for ...
Celis, Arlensiú +12 more
core +2 more sources
BCS Superconductivity of Dirac Electrons in Graphene Layers [PDF]
Physical Review Letters, 2008 Possible superconductivity of electrons with the Dirac spectrum is analyzed using the BCS model. We calculate the critical temperature, the superconducting energy gap, and supercurrent as functions of the doping level and of the pairing interaction strength.
Kopnin, N. B., Sonin, E. B.
openaire +3 more sources
Arthritis Care &Research, EarlyView.Objective Hydroxychloroquine (HCQ) is a cornerstone therapy in systemic lupus erythematosus (SLE), but the weight‐based dosing does not account for clinical factors that can introduce individual variability in drug metabolism and clearance. We leveraged longitudinal data from a prospective SLE cohort to identify clinical factors that predict ...
Jay J. Patel +6 more
wiley +1 more source
A Q‐Learning Algorithm to Solve the Two‐Player Zero‐Sum Game Problem for Nonlinear Systems
International Journal of Adaptive Control and Signal Processing, Volume 39, Issue 3, Page 566-581, March 2025.A Q‐learning algorithm to solve the two‐player zero‐sum game problem for nonlinear systems. ABSTRACT This paper deals with the two‐player zero‐sum game problem, which is a bounded L2$$ {L}_2 $$‐gain robust control problem. Finding an analytical solution to the complex Hamilton‐Jacobi‐Issacs (HJI) equation is a challenging task.
Afreen Islam +2 more
wiley +1 more source
, 2012 The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014.
Backhaus, Malte
core +1 more source
Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source
Thermoreflectance Detection of Point Defects Resulting from Focused Ion Beam Milling
Advanced Engineering Materials, EarlyView.Focused ion beam (FIB) milling is a common tool for nanoscale material processing, however irradiation damage, redeposition, and contamination can occur. We use several characterization tools to show FIB‐induced effects beyond 1 mm from the milled area.
Thomas W. Pfeifer +3 more
wiley +1 more source
Harnessing Fungal Biowelding for Constructing Mycelium‐Engineered Materials
Advanced Engineering Materials, EarlyView.Mycelium‐bound composites (MBCs) offer low‐carbon alternatives for construction, yet interfacial bonding remains a critical challenge. This review examines fungal biowelding as a biocompatible adhesive, elucidating mycelium‐mediated interfacial mechanisms and their role in material assembly. Strategies to optimize biowelding are discussed, highlighting
Xue Brenda Bai +2 more
wiley +1 more source
Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology
Advanced Engineering Materials, EarlyView.We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham +7 more
wiley +1 more source
Controlling doping in graphene through a SiC substrate: A first-principles study
, 2011 Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming doping difficulty
Bing Huang +3 more
core +1 more source