Results 171 to 180 of about 217,009 (264)

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications

open access: yesAdvanced Materials, EarlyView.
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li   +6 more
wiley   +1 more source

Superionic Amorphous Li2ZrCl6 and Li2HfCl6

open access: yesAdvanced Materials, EarlyView.
Amorphous Li2HfCl6 and L2ZrCl6 are shown to be promising solid‐state electrolytes with predicted ionic conductivities >20 mS·cm−1. Molecular dynamics simulations with machine‐learning force fields reveal that anion vibrations and flexible MCl6 octahedra soften the Li coordination cage and enhance mobility. Correlation between Li‐ion diffusivity and the
Shukai Yao, De‐en Jiang
wiley   +1 more source

Atomically Resolved Acoustic Dynamics Coupled with Magnetic Order in a Van der Waals Antiferromagnet

open access: yesAdvanced Materials, EarlyView.
Magnetically coupled acoustic phonon modes (f1, f2, f3) are captured by ultrafast X‐ray diffraction in a prototypical van der Waals antiferromagnet FePS3, including their atomic displacement vectors (u) and the acoustic propagation wave vectors (k). Notably, the atomic displacement vector and amplitude of these modes, represented by the direction and ...
Faran Zhou   +24 more
wiley   +1 more source

Minimizing Ionic Losses in DMSO-Free Tin-Based Perovskite Solar Cells. [PDF]

open access: yesACS Energy Lett
Sowmeeh PF   +13 more
europepmc   +1 more source

Spin‐Selective Anti‐Perovskite Enables Breakthrough Nitrate‐to‐Ammonia Electrocatalysis

open access: yesAdvanced Materials, EarlyView.
CuNCo3 antiperovskite leverages built‐in 3d–3d interactions to stabilize and generate spin‐selective Co sites during nitrate reduction. Multiple operando techniques reveal that Cu acts as a promoter, inducing partial surface Co‐N cleavage and Cu‐Co charge redistribution.
Chun‐Kuo Peng   +11 more
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy